Optimization of Si interface control layer thickness for high-k GaAs metal-insulator-semiconductor structures

Materials Science and Engineering: B

Volumn 165, Issue 1-2, 2009, Pages 122-125

  Akazawa, Masamichi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Gallium arsenide; Interface states; Molecular beam epitaxy; Surface passivation

Indexed keywords

ALUMINUM NITRIDE; CAPACITANCE; GALLIUM ARSENIDE; HAFNIUM OXIDES; III-V SEMICONDUCTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MOLECULAR BEAM EPITAXY; PASSIVATION; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH- K; INITIAL THICKNESS; INTERFACE CONTROL LAYER; INTERFACES STATE; LAYER THICKNESS; METAL-INSULATOR-SEMICONDUCTOR STRUCTURES; MIS STRUCTURE; MOLECULAR-BEAM EPITAXY; OPTIMISATIONS; SURFACE PASSIVATION;

INTERFACE STATES;

EID: 71749102879     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.03.009     Document Type: Article

References (8)

1. R. Chau, Plenary talk of 2006 DRC, Penn State Univ., June, 2006; R. Chau et al., IEEE Trans. Nanotechnol. 4 (2005) 153.
2. Hill R.J.W., Moran D.A.J., Li X., Zhou H., Macintyre D., Thomas S., Asenov A., Zurcher P., Rajagopalan K., Abrokwah J., Droopad R., Passlack M., and Thayne I.G. IEEE Electron Device Lett. 28 (2007) 1080
3. Ye P.D., Wilk G.D., Yang B., Kwo J., Chu S.N.G., Nakahara S., Gossmann H.-J.L., Mannaerts J.P., Hong M., Ng K.K., and Bude J. Appl. Phys. Lett. 83 (2003) 180
4. Akazawa M., and Hasegawa H. J. Vac. Sci. Technol. B 25 (2007) 1481
5. M. Tamura, A. Hashimoto, Ext. Abst. 1991 Int. Conf. Solid State Devices and Materials (Yokohama, Japan, 1991), p. 411.
6. Nicollian E.H., and Brews J.R. MOS Physics and Technology (1982), Wiley, New York
7. Brammertz G., Martens K., Sioncke S., Delabie A., Caymax M., Meuris M., and Heyns M. Appl. Phys. Lett. 91 (2007) 133510
8. Akazawa M., and Hasegawa H. J. Vac. Sci Technol. B 26 (2008) 1569