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Electrochemical and Solid-State Letters

Volumn 14, Issue 2, 2011, Pages

Effects of interface Al2O3 passivation layer for High-k HfO2 on GaAs

(6) Suh, Dong Chan a Cho, Young Dae a Ko, Dae Hong a,c Lee, Yongshik a Chung, Kwun Bum b Cho, Mann Ho a

a Yonsei University (South Korea)

b Dankook University (South Korea)

c Samsung Electronics Manufacturing Technology Center Test and Package Technology Group (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AS CONTENT; CAPACITANCE VALUES; CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRICAL PROPERTY; GAAS; HIGH-K HFO; INTERFACIAL OXIDES; PASSIVATION LAYER;

ALUMINUM; ATOMIC LAYER DEPOSITION; CAPACITANCE; GALLIUM ALLOYS; GALLIUM ARSENIDE; HAFNIUM; HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

PASSIVATION;

EID: 78951478114 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3516615 Document Type: Article

Times cited : (13)

References (18)

1
- 69549120234
- APPLAB 0003-6951,. 10.1063/1.3213545
- C.-W. Cheng, J. Hennessy, D. Antoniadis, and E. A. Fitzgerald, Appl. Phys. Lett. APPLAB 0003-6951, 95, 082106 (2009). 10.1063/1.3213545
- (2009) Appl. Phys. Lett. , vol.95 , pp. 082106
- Cheng, C.-W.¹ Hennessy, J.² Antoniadis, D.³ Fitzgerald, E.A.⁴

2
- 66749167599
- APPLAB 0003-6951,. 10.1063/1.3148723
- H. D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, T. Gustafsson, and E. Garfunkel, Appl. Phys. Lett. APPLAB 0003-6951, 94, 222108 (2009). 10.1063/1.3148723
- (2009) Appl. Phys. Lett. , vol.94 , pp. 222108
- Lee, H.D.¹ Feng, T.² Yu, L.³ Mastrogiovanni, D.⁴ Wan, A.⁵ Gustafsson, T.⁶ Garfunkel, E.⁷

3
- 66549099372
- APPLAB 0003-6951,. 10.1063/1.3147218
- M. Xu, Y. Q. Wu, O. Koybasi, T. Shen, and P. D. Ye, Appl. Phys. Lett. APPLAB 0003-6951, 94, 212104 (2009). 10.1063/1.3147218
- (2009) Appl. Phys. Lett. , vol.94 , pp. 212104
- Xu, M.¹ Wu, Y.Q.² Koybasi, O.³ Shen, T.⁴ Ye, P.D.⁵

4
- 57849142451
- APPLAB 0003-6951,. 10.1063/1.3050466
- Y. Q. Wu, M. Xu, P. D. Ye, Z. Cheng, J. Li, J.-S. Park, J. Hydrick, J. Bai, M. Carroll, J. G. Fiorenza, and A. Lochtefeld, Appl. Phys. Lett. APPLAB 0003-6951, 93, 242106 (2008). 10.1063/1.3050466
- (2008) Appl. Phys. Lett. , vol.93 , pp. 242106
- Wu, Y.Q.¹ Xu, M.² Ye, P.D.³ Cheng, Z.⁴ Li, J.⁵ Park, J.-S.⁶ Hydrick, J.⁷ Bai, J.⁸ Carroll, M.⁹ Fiorenza, J.G.¹⁰ Lochtefeld, A.¹¹

5
- 68249127329
- APPLAB 0003-6951,. 10.1063/1.3182702
- C. Y. Kim, S. W. Cho, M.-H. Cho, K. B. Chung, D. C. Suh, D.-H. Ko, C.-H. An, H. Kim, and H. J. Lee, Appl. Phys. Lett. APPLAB 0003-6951, 95, 042903 (2009). 10.1063/1.3182702
- (2009) Appl. Phys. Lett. , vol.95 , pp. 042903
- Kim, C.Y.¹ Cho, S.W.² Cho, M.-H.³ Chung, K.B.⁴ Suh, D.C.⁵ Ko, D.-H.⁶ An, C.-H.⁷ Kim, H.⁸ Lee, H.J.⁹

6
- 62549095943
- APPLAB 0003-6951,. 10.1063/1.3089688
- É. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, M. E. Pemble, G. Brammertz, M. Heyns, S. B. Newcomb, Appl. Phys. Lett. APPLAB 0003-6951, 94, 102902 (2009). 10.1063/1.3089688
- (2009) Appl. Phys. Lett. , vol.94 , pp. 102902
- O'Connor, É.¹ Monaghan, S.² Long, R.D.³ O'Mahony, A.⁴ Povey, I.M.⁵ Cherkaoui, K.⁶ Pemble, M.E.⁷ Brammertz, G.⁸ Heyns, M.⁹ Newcomb, S.B.¹⁰

7
- 60749136099
- APPLAB 0003-6951,. 10.1063/1.3079409
- G. K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. Chia, and D. Z. Chi, Appl. Phys. Lett. APPLAB 0003-6951, 94, 073502 (2009). 10.1063/1.3079409
- (2009) Appl. Phys. Lett. , vol.94 , pp. 073502
- Dalapati, G.K.¹ Sridhara, A.² Wong, A.S.W.³ Chia, C.K.⁴ Chi, D.Z.⁵

8
- 45749149519
- APPLAB 0003-6951,. 10.1063/1.2949079
- R. Suri, D. J. Lichtenwalner, and V. Misra, Appl. Phys. Lett. APPLAB 0003-6951, 92, 243506 (2008). 10.1063/1.2949079
- (2008) Appl. Phys. Lett. , vol.92 , pp. 243506
- Suri, R.¹ Lichtenwalner, D.J.² Misra, V.³

9
- 34248172127
- last accessed August 15, 2010
- International technology roadmap for semiconductors (2009), http://www.itrs.net, last accessed August 15, 2010.
- (2009) International Technology Roadmafor Semiconductors

10
- 0017613686
- SCIEAS 0036-8075,. 10.1126/science.195.4283.1230
- R. W. Keys, Science SCIEAS 0036-8075, 195, 1230 (1997). 10.1126/science.195.4283.1230
- (1997) Science , vol.195 , pp. 1230
- Keys, R.W.¹

11
- 51949117071
- S. Suthram, Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, T. Koehler, T. Acosta, Dig. Tech. Pap.-Symp. VLSI Technol., 2008, 182.
- Dig. Tech. Pap.-Symp. VLSI Technol. , vol.2008 , pp. 182
- Suthram, S.¹ Sun, Y.² Majhi, P.³ Ok, I.⁴ Kim, H.⁵ Harris, H.R.⁶ Goel, N.⁷ Parthasarathy, S.⁸ Koehler, T.⁹ Acosta, T.¹⁰

12
- 44349160650
- APPLAB 0003-6951,. 10.1063/1.2917823
- I. Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, D. Garcia, P. Majhi, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951, 92, 202908 (2008). 10.1063/1.2917823
- (2008) Appl. Phys. Lett. , vol.92 , pp. 202908
- Ok, I.¹ Kim, H.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Garcia, D.⁸ Majhi, P.⁹ Lee, J.C.¹⁰

13
- 37149002461
- APPLAB 0003-6951,. 10.1063/1.2822422
- G. K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. China, S. J. Lee, and D. Chi, Appl. Phys. Lett. APPLAB 0003-6951, 91, 242101 (2009). 10.1063/1.2822422
- (2009) Appl. Phys. Lett. , vol.91 , pp. 242101
- Dalapati, G.K.¹ Sridhara, A.² Wong, A.S.W.³ China, C.K.⁴ Lee, S.J.⁵ Chi, D.⁶

14
- 49749144188
- APPLAB 0003-6951,. 10.1063/1.2972107
- H.-S. Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, J. C. Lee, P. Majhi, N. Goel, Appl. Phys. Lett. APPLAB 0003-6951, 93, 062111 (2008). 10.1063/1.2972107
- (2008) Appl. Phys. Lett. , vol.93 , pp. 062111
- Kim, H.-S.¹ Ok, I.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Lee, J.C.⁸ Majhi, P.⁹ Goel, N.¹⁰

15
- 77951198414
- APPLAB 0003-6951,. 10.1063/1.3377915
- D. C. Suh, Y. D. Cho, S. W. Kim, D.-H. Ko, Y. Lee, M.-H. Cho, and J. Oh, Appl. Phys. Lett. APPLAB 0003-6951, 96, 142112 (2010). 10.1063/1.3377915
- (2010) Appl. Phys. Lett. , vol.96 , pp. 142112
- Suh, D.C.¹ Cho, Y.D.² Kim, S.W.³ Ko, D.-H.⁴ Lee, Y.⁵ Cho, M.-H.⁶ Oh, J.⁷

16
- 68949146658
- ESLEF6 1099-0062,. 10.1149/1.3193534
- D. C. Suh, Y. D. Cho, Y. Lee, D.-H. Ko, K. B. Chung, and M.-H. Cho, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 12, H376 (2009). 10.1149/1.3193534
- (2009) Electrochem. Solid-State Lett. , vol.12 , pp. 376
- Suh, D.C.¹ Cho, Y.D.² Lee, Y.³ Ko, D.-H.⁴ Chung, K.B.⁵ Cho, M.-H.⁶

17
- 40849136453
- APPLAB 0003-6951,. 10.1063/1.2844883
- H.-S. Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, J. C. Lee, J. Oh, and P. Majhi, Appl. Phys. Lett. APPLAB 0003-6951, 92, 102904 (2008). 10.1063/1.2844883
- (2008) Appl. Phys. Lett. , vol.92 , pp. 102904
- Kim, H.-S.¹ Ok, I.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Lee, J.C.⁸ Oh, J.⁹ Majhi, P.¹⁰

18
- 56249143080
- APPLAB 0003-6951,. 10.1063/1.2996261
- C. Y. Kim, S. W. Cho, M.-H. Cho, K. B. Chung, C.-H. An, H. Kim, H. J. Lee, and D.-H. Ko, Appl. Phys. Lett. APPLAB 0003-6951, 93, 192902 (2008). 10.1063/1.2996261
- (2008) Appl. Phys. Lett. , vol.93 , pp. 192902
- Kim, C.Y.¹ Cho, S.W.² Cho, M.-H.³ Chung, K.B.⁴ An, C.-H.⁵ Kim, H.⁶ Lee, H.J.⁷ Ko, D.-H.⁸

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