Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs

Journal of Applied Physics

Volumn 86, Issue 10, 1999, Pages 5376-5384

  Chen, Chang Ho ^b   Gösele, Ulrich M ^a,b   Tan, Teh Y ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0043048465     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371534     Document Type: Article

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