Atomic-scale properties of the amphoteric dopant Si in GaAs(110) surfaces

Surface Science

Volumn 415, Issue 3, 1998, Pages 285-298

  Domke, C ^a   Ebert, Ph ^a   Urban, K ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Gallium arsenide; Low index single crystal surfaces; Scanning tunneling microscopy; Semiconducting surfaces; Silicon; Single crystal surfaces; Surface defects; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

ATOMS; CRYSTAL SYMMETRY; ELECTRONIC PROPERTIES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; SINGLE CRYSTALS;

LOW INDEX SINGLE CRYSTAL SURFACES; SILICON DONOR SILICON ACCEPTOR DIPOLE; SURFACE DEFECTS; SURFACE ELECTRONIC PHENOMENA;

SURFACES;

EID: 0032500388     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00535-4     Document Type: Article

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