The effect of NH3 on the interface of HfO2 and Al2 O3 films on GaAs(100) surfaces

Electrochemical and Solid-State Letters

Volumn 12, Issue 10, 2009, Pages

  Suh, Dong Chan ^a   Cho, Young Dae ^a   Lee, Yongshik ^a   Ko, Dae Hong ^a   Chung, Kwun Bum ^b   Cho, Mann Ho ^a  

^a Yonsei University   (South Korea)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; GAAS(1 0 0); HEAT-TREATMENT; HIGH-K DIELECTRIC MATERIALS; MONOCHROMATIC X-RAYS; NITRIDATION PROCESS; REACTION MECHANISM;

GALLIUM ALLOYS; HAFNIUM COMPOUNDS; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC MATERIALS;

EID: 68949146658     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3193534     Document Type: Article

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