The dislocations of low-angle grain boundaries in GaN epilayers: A HRTEM quantitative study and finite element stress state calculation

Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 910-913

  Kret, S ^a,c   Dluzewski, P ^b   Maciejewski, G ^b   Potin, V ^a   Chen, J ^a   Ruterana, P ^a   Nouet, G ^a  

^a LABORATOIRE CRISMAT   (France)

^b INSTITUTE OF FUNDAMENTAL TECHNOLOGICAL RESEARCH   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Dislocations; Electron microscopy; Nitrides; Stress

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FINITE ELEMENT METHOD; GRAIN BOUNDARIES; HIGH RESOLUTION ELECTRON MICROSCOPY; MATHEMATICAL MODELS; SAPPHIRE; STRAIN; STRESS ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

EPILAYERS;

GALLIUM NITRIDE;

STRESS;

EID: 0036508288     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00005-5     Document Type: Article

References (10)