Suppression of 〈100〉 dark-line defect growth in AlGaAs/InGaAs single quantum well lasers grown on Si substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 11, 1996, Pages 5637-5641

  Hasegawa, Yoshiaki ^a,b   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

AlGaAs InGaAs laser on Si; Dark line defect; Dislocation pinning; Electroluminescence; Rapid degradation; Stress

Indexed keywords

DARK LINE DEFECT; DISLOCATION PINNING; RAPID DEGRADATION; SINGLE QUANTUM WELL;

ELECTROLUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

QUANTUM WELL LASERS;

EID: 0030286910     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5637     Document Type: Article

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