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Volumn 96, Issue 16, 2010, Pages

Role of c -screw dislocations on indium segregation in InGaN and InAlN alloys

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ATOMIC STRUCTURE; CORE ENERGY; CORE REGION; DISLOCATION LINES; ENERGETIC STABILITY; EXPERIMENTAL OBSERVATION; INDIUM SEGREGATION; INTERACTION ENERGIES; STILLINGER-WEBER POTENTIALS; WURTZITES;

EID: 77951806436     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3394007     Document Type: Article
Times cited : (43)

References (18)
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    • Léonard, F.1    Desai, R.C.2
  • 10
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    • PRBMDO 0163-1829. 10.1103/PhysRevB.31.5262
    • F. H. Stillinger and T. A. Weber, Phys. Rev. B PRBMDO 0163-1829 31, 5262 (1985). 10.1103/PhysRevB.31.5262
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    • RPPHAG 0034-4885. 10.1088/0034-4885/33/1/303
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    • Bullough, R.1    Newman, R.C.2
  • 12
    • 59049108212 scopus 로고    scopus 로고
    • Molecular dynamics and first principle investigations of dislocations and quantum wells in III-nitride semiconductors
    • MICEB9 0026-2692, (); 10.1016/j.mejo.2008.07.068, Doctoral thesis, Caen University, 2009
    • H. P. Lei, J. Chen, X. J. Jiang, and G. Nouet, Microelectron. J. MICEB9 0026-2692 40, 342 (2009); 10.1016/j.mejo.2008.07.068 H. P. Lei, Molecular Dynamics and First Principle Investigations of Dislocations and Quantum Wells in III-Nitride Semiconductors., Doctoral thesis, Caen University, 2009.
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  • 16
    • 0001714294 scopus 로고    scopus 로고
    • GaN (210 GPa) >AlN (185-212 GPa) >InN (125 GPa).The data of GaN refers to JAPIAU 0021-8979 10.1063/1.361236
    • GaN (210 GPa) >AlN (185-212 GPa) >InN (125 GPa). The data of GaN refers to A. Polian, J. Appl. Phys. JAPIAU 0021-8979 79, 3343 (1996); 10.1063/1.361236
    • (1996) J. Appl. Phys. , vol.79 , pp. 3343
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