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Applied Physics Letters

Volumn 95, Issue 13, 2009, Pages

Programming margin enlargement by material engineering for multilevel storage in phase-change memory

(4) Yin, You a Noguchi, Tomoyuki a Ohno, Hiroki a Hosaka, Sumio a

a GUNMA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEATING LAYER; IN-PHASE; LAYERED PHASE; MATERIAL ENGINEERING; MULTILEVEL STORAGE; PHASE CHANGES; RESISTANCE LEVEL; RESISTANCE RATIO; THREE ORDERS OF MAGNITUDE;

CELL MEMBRANES;

PHASE CHANGE MEMORY;

EID: 70349671462 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3240408 Document Type: Article

Times cited : (29)

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