Evidence of the thermo-electric thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 315-318

  Castro, D Tio ^a   Goux, L ^b   Hurkx, G A M ^a   Attenborough, K ^a   Delhougne, R ^a   Lisoni, J ^b   Jedema, F J ^c   In't Zandt, M A A ^c   Wolters, R A M ^c   Gravesteijn, D J ^a   Verheijen, M A ^d   Kaiser, M ^d   Weemaes, R G R ^d   Wouters, D J ^b  

^a NXP TSMC Research Center   (Belgium)

^b IMEC   (Belgium)

^c NXP TSMC Research Center   (Netherlands)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CELLS; CYTOLOGY; ELECTRON DEVICES; PULSE CODE MODULATION; SEMICONDUCTOR STORAGE; THERMOELECTRICITY;

CELL OPTIMIZATION; CONTACT AREAS; IN PHASE; IN-LINE; MOLTEN ZONES; PHASE-CHANGE MATERIAL; PHASE-CHANGE MEMORIES; RESET CURRENTS; THOMSON; THOMSON EFFECTS;

PHASE CHANGE MEMORY;

EID: 50249124564     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418934     Document Type: Conference Paper

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