SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

Atomic migration in molten and crystalline Ge2 Sb2 Te5 under high electric field

(4) Yang, Tae Youl a Park, Il Mok a Kim, Byoung Joon a Joo, Young Chang a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC MIGRATION; CRYSTALLINE GE; CRYSTALLINE STATE; EFFECTIVE CHARGE; HIGH ELECTRIC FIELDS; LINE STRUCTURES; PULSED DC; SINGLE PULSE;

ATOMS; CRYSTALLINE MATERIALS; ELECTRIC FIELDS; ELECTROMIGRATION; TELLURIUM COMPOUNDS;

GERMANIUM;

EID: 67651247340 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3184584 Document Type: Article

Times cited : (103)

References (11)

1
- 33846954042
- 5 in phase-change random access memory
- DOI 10.1149/1.2409482
- J. -B. Park, G. -S. Park, H. -S. Baik, J. -H. Lee, H. Jeong, and K. Kim, J. Electrochem. Soc. 0013-4651 154, H139 (2007). 10.1149/1.2409482 (Pubitemid 46246078)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.3
- Park, J.-B.¹ Park, G.-S.² Baik, H.-S.³ Lee, J.-H.⁴ Jeong, H.⁵ Kim, K.⁶

2
- 32044444294
- 5 thin films for Phase Change Memory (PCM) devices
- DOI 10.1149/1.2164768
- S. O. Ryu, S. M. Yoon, K. J. Choi, N. Y. Lee, Y. S. Park, S. Y. Lee, B. G. Yu, J. B. Park, and W. C. Shin, J. Electrochem. Soc. 0013-4651 153, G234 (2006). 10.1149/1.2164768 (Pubitemid 43201486)
- (2006) Journal of the Electrochemical Society , vol.153 , Issue.3
- Ryu, S.O.¹ Yoon, S.M.² Choi, K.J.³ Lee, N.Y.⁴ Park, Y.S.⁵ Lee, S.Y.⁶ Yu, B.G.⁷ Park, J.B.⁸ Shin, W.C.⁹

3
- 35148814078
- 5 chalcogenide thin films
- DOI 10.1016/j.apsusc.2007.07.098, PII S0169433207009518
- S. -M. Yoon, K. -J. Choi, N. -Y. Lee, S. -Y. Lee, Y. -S. Park, and B. -G. Yu, Appl. Surf. Sci. 0169-4332 254, 316 (2007). 10.1016/j.apsusc.2007.07.098 (Pubitemid 47539653)
- (2007) Applied Surface Science , vol.254 , Issue.1 SPEC. ISS. , pp. 316-320
- Yoon, S.-M.¹ Choi, K.-J.² Lee, N.-Y.³ Lee, S.-Y.⁴ Park, Y.-S.⁵ Yu, B.-G.⁶

4
- 60449120387
- 1099-0062,. 10.1149/1.3079480
- S. -W. Nam, D. Lee, M. -H. Kwon, D. Kang, C. Kim, T. -Y. Lee, S. Heo, Y. -W. Park, K. Lim, H. -S. Lee, J. -S. Wi, K. -W. Yi, Y. Khang, and K. -B. Kim, Electrochem. Solid-State Lett. 1099-0062 12, H155 (2009). 10.1149/1.3079480
- (2009) Electrochem. Solid-State Lett. , vol.12 , pp. 155
- Nam, S.-W.¹ Lee, D.² Kwon, M.-H.³ Kang, D.⁴ Kim, C.⁵ Lee, T.-Y.⁶ Heo, S.⁷ Park, Y.-W.⁸ Lim, K.⁹ Lee, H.-S.¹⁰ Wi, J.-S.¹¹ Yi, K.-W.¹² Khang, Y.¹³ Kim, K.-B.¹⁴

5
- 67650577069
- 0013-4651,. 10.1149/1.3137056
- T. -Y. Yang, I. -M. Park, H. -Y. You, S. -H. Oh, K. -W. Yi, and Y. -C. Joo, J. Electrochem. Soc. 0013-4651 156, H617 (2009). 10.1149/1.3137056
- (2009) J. Electrochem. Soc. , vol.156 , pp. 617
- Yang, T.-Y.¹ Park, I.-M.² You, H.-Y.³ Oh, S.-H.⁴ Yi, K.-W.⁵ Joo, Y.-C.⁶

6
- 49749201891
- 0022-3697,. 10.1016/0022-3697(61)90138-X
- H. B. Huntington and A. R. Grone, J. Phys. Chem. Solids 0022-3697 20, 76 (1961). 10.1016/0022-3697(61)90138-X
- (1961) J. Phys. Chem. Solids , vol.20 , pp. 76
- Huntington, H.B.¹ Grone, A.R.²

7
- 33747359377
- Relationship between edge drift and atomic migration during electromigration of eutectic SnPb lines
- DOI 10.1063/1.2210262
- M. -S. Yoon, S. -B. Lee, O. -H. Kim, Y. -B. Park, and Y. -C. Joo, J. Appl. Phys. 0021-8979 100, 033715 (2006). 10.1063/1.2210262 (Pubitemid 44244719)
- (2006) Journal of Applied Physics , vol.100 , Issue.3 , pp. 033715
- Yoon, M.-S.¹ Lee, S.-B.² Kim, O.-H.³ Park, Y.-B.⁴ Joo, Y.-C.⁵

8
- 33845279880
- 0020-1669,. 10.1021/ic00277a030
- R. Pearson, Inorg. Chem. 0020-1669 27, 734 (1988). 10.1021/ic00277a030
- (1988) Inorg. Chem. , vol.27 , pp. 734
- Pearson, R.¹

9
- 43149102086
- 4 for rewritable data storage use
- DOI 10.1088/0953-8984/20/20/205102, PII S0953898408726523
- Z. Sun, J. Zhou, A. Blomqvist, L. Xu, and R. Ahuja, J. Phys.: Condens. Matter 0953-8984 20, 205102 (2008). 10.1088/0953-8984/20/20/205102 (Pubitemid 351640996)
- (2008) Journal of Physics Condensed Matter , vol.20 , Issue.20 , pp. 205102
- Sun, Z.¹ Zhou, J.² Blomqvist, A.³ Xu, L.⁴ Ahuja, R.⁵

10
- 36749106146
- 0003-6951,. 10.1063/1.91526
- J. R. Lloyd, M. R. Polcari, and G. A. MacKenzie, Appl. Phys. Lett. 0003-6951 36, 428 (1980). 10.1063/1.91526
- (1980) Appl. Phys. Lett. , vol.36 , pp. 428
- Lloyd, J.R.¹ Polcari, M.R.² MacKenzie, G.A.³

11
- 33144464043
- Electronic structure of intrinsic defects in crystalline germanium telluride
- DOI 10.1103/PhysRevB.73.045210, 045210
- A. H. Edwards, Phys. Rev. B 0163-1829 73, 045210 (2006). 10.1103/PhysRevB.73.045210 (Pubitemid 43270668)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.73 , Issue.4 , pp. 1-13
- Edwards, A.H.¹ Pineda, A.C.² Schultz, P.A.³ Martin, M.G.⁴ Thompson, A.P.⁵ Hjalmarson, H.P.⁶ Umrigar, C.J.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.