On the dynamic resistance and reliability of phase change memory

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 96-97

  Rajendran, B ^a   Lee, M H ^b   Breitwisch, M ^a   Burr, G W ^d   Shih, Y H ^b   Cheek, R ^a   Schrott, A ^a   Chen, C F ^b   Lamorey, M ^c   Joseph, E ^a   Zhu, Y ^a   Dasaka, R ^a   Flait, P L ^e   Baumann, F H ^e   Lung, H L ^b   Lam, C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^c IBM   (United States)

^d IBM ALMADEN RESEARCH CENTER   (United States)

^e IBM Hopewell Junction ^*

Author keywords

NV memory and chalcogenide; PCRAM

Indexed keywords

TECHNOLOGY;

CELL RESISTANCE; DYNAMIC RESISTANCE; NV MEMORY AND CHALCOGENIDE; PCRAM; PHASE-CHANGE MEMORIES; VLSI TECHNOLOGIES;

PHASE CHANGE MEMORY;

EID: 51949091262     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588576     Document Type: Conference Paper

References (1)

1. S. Lai, IEDM Tech. Digest, 2003.