Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition

Nanotechnology

Volumn 22, Issue 30, 2011, Pages

  Eisenhawer, Björn ^a,b   Sivakov, Vladimir ^a,c   Berger, Andreas ^a,c   Christiansen, Silke ^a,d  

^a LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM EVAPORATION; ENERGY DISPERSIVE X-RAY; GOLD NANOPARTICLES; GROUP III NITRIDES; III-V COMPOUNDS; INGAAS/GAAS; INGAN/GAN; LINE SCAN; NANOWIRE GROWTH; P-N JUNCTION; PURE SILICON; SHARP TRANSITION; SI NANOWIRE; SI-GE HETEROJUNCTION; VAPOR-LIQUID-SOLID; VAPOR-LIQUID-SOLID GROWTH; WIRE GROWTH;

CHEMICAL VAPOR DEPOSITION; ELECTRON BEAMS; GERMANIUM; GOLD COATINGS; GOLD DEPOSITS; HETEROJUNCTIONS; LIQUIDS; NANOWIRES; NITRIDES; PULSED LASER DEPOSITION; SILICON ALLOYS; VAPORS;

PULSED LASERS;

EID: 79960404186     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/30/305604     Document Type: Article

References (48)

1. Lu W and Lieber C M 2006 Semiconductor nanowires J. Phys. D: Appl. Phys. 39 R387-406
2. Feng X, He R, Yang P and Roukes M L 2007 Very high frequency silicon nanowire electromechanical resonators Nano Lett. 7 1953-9 (Pubitemid 47197573)
3. Cui Y, Wei Q, Park H and Lieber C M 2001 Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species Science 293 1289-92 (Pubitemid 32777412)
4. Kayes B, Atwater H and Lewis N 2005 Comparison of the device physics principles of planar and radial pn junction nanorod solar cells J. Appl. Phys. 97 114302
5. Stelzner T, Pietsch M, Andrä G, Falk F, Ose E and Christiansen S 2008 Silicon nanowire-based solar cells Nanotechnology 19 295203
6. Tsakalakos L, Balch J, Fronheiser J, Korevaar B A, Sulima O and Rand J 2007 Silicon nanowire solar cells Appl. Phys. Lett. 91 233117
7. Cui Y, Zhong Z, Wang D, Wang W U and Lieber C M 2003 High performance silicon nanowire field effect transistors Nano Lett. 3 149-52 (Pubitemid 37130527)
8. Goldberger J, Hochbaum A I, Fan R and Yang P 2006 Silicon vertically integrated nanowire field effect transistors Nano Lett. 6 973-7 (Pubitemid 43836614)
9. Xiang J, Lu W, Hu Y, Wu Y, Yan H and Lieber C M 2006 Ge/Si nanowire heterostructures as high-performance field-effect transistors Nature 441 489-93 (Pubitemid 44050147)
10. Storm K, Nylund G, Samuelson L and Micolich A 2011 Realizing lateral wrap-gated nanowire fets: controlling gate length with chemistry rather than lithography Nano Lett. doi:10.1021/nl104403g
11. Tian B, Zheng X, Kempa T, Fang Y, Yu N, Yu G, Huang J and Lieber C 2007 Coaxial silicon nanowires as solar cells and nanoelectronic power sources Nature 449 885-90
12. Lauhon L, Gudiksen M, Wang D and Lieber C 2002 Epitaxial core-shell and core-multishell nanowire heterostructures Nature 420 57-61 (Pubitemid 35291437)
13. Garnett E and Yang P 2008 Silicon nanowire radial p-n junction solar cells J. Am. Chem. Soc. 130 9224-5 (Pubitemid 352031121)
14. Kempa T, Tian B, Kim D, Hu J, Zheng X and Lieber C 2008 Single and tandem axial pin nanowire photovoltaic devices Nano Lett. 8 3456-60
15. Hoffmann S, Bauer J, Ronning C, Stelzner T, Michler J, Ballif C, Sivakov V and Christiansen S 2009 Axial pn junctions realized in silicon nanowires by ion implantation Nano Lett. 9 1341-4
16. Wen C Y, Reuter M C, Bruley J, Tersoff J, Kodambaka S, Stach E A and Ross F M 2009 Formation of compositionally abrupt axial heterojunctions in silicon-germanium nanowires Science 326 1247
17. Kim C, Lee D, Lee H, Lee G, Kim G and Jo M 2009 Vertically aligned Si intrananowire pn diodes by large-area epitaxial growth Appl. Phys. Lett. 94 173105
18. Gudiksen M, Lauhon L, Wang J, Smith D and Lieber C 2002 Growth of nanowire superlattice structures for nanoscale photonics and electronics Nature 415 617-20 (Pubitemid 34136383)
19. Wagner R S and Ellis W C 1964 Vapor-liquid-solid mechanism of single crystal growth Appl. Phys. Lett. 4 89
20. Das Kanungo P, Wolfsteller A, Zakharov N D, Werner P and Gösele U 2009 Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy Microelectron. J. 40 452-5
21. x nanowires Nano Lett. 6 2679-84
22. Eisenhawer B, Zhang D, Clavel R, Berger A, Michler J and Christiansen S 2011 Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging Nanotechnology 22 075706
23. Sivakov V, Andrä G, Gösele U and Christiansen S 2006 Epitaxial vapor-liquid-solid growth of silicon nano-whiskers by electron beam evaporation Phys. Status Solidi a 203 3692-8 (Pubitemid 46034541)
24. Hansen M and Anderko K 1958 Constitution of Binary Alloys (New York: McGraw-Hill)
25. Schmid H, Björk M T, Knoch J, Karg S, Riel H and Riess W 2009 Doping limits of grown in situ doped silicon nanowires using phosphine Nano Lett. 9 173-7
26. Pan L, Lew K K, Redwing J M and Dickey E C 2005 Effect of diborane on the microstructure of boron-doped silicon nanowires J. Cryst. Growth 277 428-36 (Pubitemid 40424464)
27. Kamins T I, Li X, Williams R S and Liu X 2004 Growth and structure of chemically vapor deposited Ge nanowires on Si substrates Nano Lett. 4 503-6 (Pubitemid 38402641)
28. Woodruff J H, Ratchford J B, Goldthorpe I A, McIntyre P C and Chidsey C E D 2007 Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal Nano Lett. 7 1637-42 (Pubitemid 47140437)
29. Zakharov N D, Werner P, Gerth G, Schubert L, Sokolov L and Gösele U 2006 Growth phenomena of Si and Si/Ge nanowires on Si(111) by molecular beam epitaxy J. Cryst. Growth 290 6-10
30. Wu Y, Fan R and Yang P 2002 Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires Nano Lett. 2 83-6 (Pubitemid 135706268)
31. Mouchet C, Latu-Romain L, Cayron C, Rouviere E, Celle C and Simonato J 2008 Growth of one-dimensional Si/SiGe heterostructures by thermal CVD Nanotechnology 19 335603
32. Wolfsteller A, Geyer N, Nguyen-Duc T K, DasKanungo P, Zakharov N D, Reiche M, Erfurth W, Blumtritt H, Werner P and Gösele U 2009 Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures Thin Solid Films 518 2555-61
33. Li N, Tan T Y and Gösele U 2008 Transition region width of nanowire hetero-and pn-junctions grown using vapor-liquid-solid processes Appl. Phys. A 90 591-6
34. Schubert L, Werner P, Zakharov N D, Gerth G, Kolb F M, Long L, Gösele U and Tan T 2004 Silicon nanowhiskers grown on 〈111〉 Si substrates by molecular-beam epitaxy Appl. Phys. Lett. 84 4968
35. 7 - δ thin films Appl. Phys. Lett. 61 3178-80
36. Sivakov V, Heyroth F, Falk F, Andrä G and Christiansen S 2007 Silicon nanowire growth by electron beam evaporation: kinetic and energetic contributions to the growth morphology J. Cryst. Growth 300 288-93 (Pubitemid 46386029)
37. Hannon J B, Kodambaka S, Ross F M and Tromp R M 2006 The influence of the surface migration of gold on the growth of silicon nanowires Nature 440 69-71 (Pubitemid 43336267)
38. Lugstein A, Steinmair M, Hyun Y J, Hauer G, Pongratz P and Bertagnolli E 2008 Pressure-induced orientation control of the growth of epitaxial silicon nanowires Nano Lett. 8 2310-4
39. x heterostructure nanowires Nano Lett. 8 1246-52
40. Pan L, Lew K K, Redwing J M and Dickey E C 2005 Stranski-Krastanow growth of germanium on silicon nanowires Nano Lett. 5 1081-5 (Pubitemid 40925421)
41. Eaglesham D J and Cerullo M 1990 Dislocation-free Stranski-Krastanow growth of Ge on Si(100) Phys. Rev. Lett. 64 1943-6
42. Mo Y W, Savage D E, Swartzentruber B S and Lagally M G 1990 Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001) Phys. Rev. Lett. 65 1020-3
43. Christiansen S, Albrecht M, Strunk H P and Maier H J 1994 Strained state of Ge (Si) islands on Si: finite element calculations and comparison to convergent beam electron-diffraction measurements Appl. Phys. Lett. 64 3617-9
44. Dailey J W, Taraci J, Clement T, Smith D J, Drucker J and Picraux S T 2004 Vapor-liquid-solid growth of germanium nanostructures on silicon J. Appl. Phys. 96 7556
45. Kalache B, Cabarrocas P R and Morral A F 2006 Observation of incubation times in the nucleation of silicon nanowires obtained by the vapor-liquid-solid method Japan. J. Appl. Phys. 45 190
46. Clement T, Ingole S, Ketharanathan S, Drucker J and Picraux S T 2006 In situ studies of semiconductor nanowire growth using optical reflectometry Appl. Phys. Lett. 89 163125
47. Kim B J, Tersoff J, Kodambaka S, Reuter M C, Stach E A and Ross F M 2008 Determination of size effects during the phase transition of a nanoscale Au-Si eutectic Science 322 1070
48. Kim B J, Tersoff J, Wen C Y, Reuter M C, Stach E A and Ross F M 2009 Determination of size effects during the phase transition of a nanoscale Au-Si eutectic Phys. Rev. Lett. 103 155701