Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructures

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2555-2561

  Wolfsteller, A ^a   Geyer, N ^a   Nguyen Duc, T K ^a   Das Kanungo, P ^a   Zakharov, N D ^a   Reiche, M ^a   Erfurth, W ^a   Blumtritt, H ^a   Kalem, S ^b   Werner, P ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b SCIENTIFIC AND TECHNOLOGICAL RESEARCH COUNCIL OF TURKEY   (Turkey)

Author keywords

Electron beam lithography; Molecular beam epitaxy; Reactive ion etching; Si Ge heterostructures; Silicon nanowires; Wet chemical etching

Indexed keywords

CHEMICAL BEAM EPITAXY; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; REACTIVE ION ETCHING; SILICON; SOLS;

BOTTOM UP APPROACH; COLLOIDAL LITHOGRAPHY; SI/GE; SI/GE SUPERLATTICES; SILICON NANOWIRES; THERMOELECTRIC ELEMENT; VAPOUR-LIQUID-SOLID MECHANISMS; VERTICAL NANOWIRES;

WET ETCHING;

EID: 76049115037     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.08.021     Document Type: Article

References (42)

1. Usami N., Mine T., Fukatsu S., and Shiraki Y. Appl. Phys. Lett. 64 (1994) 1126
2. Nakajiama Y., Takahashi Y., Horiguchi S., Iwadate K., Namatsu H., Kurihara K., and Tabe M. Appl. Phys. Lett. 65 (1994) 2833
3. Liu J.L., Shi Y., Wang F., Lu Y., Zhang R., Han P., Gu S.L., and Zheng Y.D. Appl. Phys. Lett. 68 (1996) 352
4. Lieber C.M. Mater. Res. Bull. 28 (2003) 128
5. Fan H.J., Werner P., and Zacharias M. Small 2 (2006) 700
6. Lauhon L.J., Gudiksen MarkS., and Lieber C.M. Philos. Trans. R. Soc. Lond., A 362 (2004) 1247
7. Dresselhaus M.S., Lin Y.M., Cronin S.B., Rabin O., Black M.R., Dresselhaus G., and Koga T. Semicond. Semimet. 71 (2001) 1
8. Li D., Wu Y., Fan R., Yang P., and Majumdar A. Appl. Phys. Lett. 83 (2003) 15
9. Hochbaum A.I., Chen R., Delgado R.D., Liang W., Garnett E.C., Najarian M., Majumdar A., and Yang P. Nature 451 (2008) 163
10. Hicks L.D., and Dresselhaus M.S. Phys. Rev., B 47 (1993) 16631
11. Boukai A., Bunimovich Y., Tahir-Kheli J., Yu J.-K., Goddard W.A., and Heath J. Nature 452 (2008) 168
12. Schmidt V., and Gösele U. Science 316 (2007) 698
13. Kodambaka S., Tersoff J., Reuter M.C., and Ross F.M. Science 316 (2007) 729
14. Wagner R.S., Ellis W.C., Jackson K., and Arnold S.M. J. Appl. Phys. 35 (1964) 2993
15. Wagner R.S., and Ellis W.C. Trans. Metall. Soc. AIME 233 (1965) 1053
16. Givargizov E.I. J. Cryst. Growth 31 (1975) 20
17. Wagner R.S., and Ellis W.C. Appl. Phys. Lett. 4 (1964) 89
18. Cui Y., Lauhon L.J., Gudiksen M., Wang J., and Lieber C.M. Appl. Phys. Lett. 78 (2001) 2214
19. Westwater J., Gosain D.P., Tomiya S., and Usui S. J. Vac. Sci. Technol., B 15 (1997) 554
20. Wu Y., Cui Y., Huynh L., Barrelet C.J., Bell D.C., and Lieber C.M. Nano Lett. 4 (2004) 433
21. Westwater J., Gosain D.P., and Usui S. Phys. Status Solidi, A Appl. Res. 165 (1998) 37
22. Schubert L., Werner P., Zakharov N.D., Gerth G., Kolb F., Long L., Gösele U., and Tan T.Y. Appl. Phys. Lett. 84 (2004) 4968
23. Park H.D., and Hogan T.P. J. Vac. Soc. Technol. B 22 (2004) 237
24. Werner P., Zakharov N.D., Gerth G., Schubert L., and Gösele U. Int. J. Mat. Res. 97 (2006) 7
25. Zakharov N.D., Werner P., Gerth G., Schubert L., Sokolov L., and Gösele U. J. Cryst. Growth 290 (2006) 6
26. Dujardin R., Poydenot V., Devillers T., Favre-Nicolin V., Gentile P., and Barski A. Appl. Phys. Lett. 89 (2006) 153129
27. L. Schubert, Doctoral Thesis, Martin Luther University Halle-Wittenberg, 2006 (in German).
28. Predel B., Bankstahl H., and Gödecke T. J. Less-Common Met. 44 (1976) 39
29. Collins C.B., Carlson R.O., and Gallagher C. J. Phys. Rev. 105 (1957) 1168
30. Allen J.E., Hemesath E.R., Perea D.E., Lensch-Falk J.L., Li Z.Y., Yin F., Gass M.H., Wang P., Bleloch A.L., Palmer R.E., and Lauhon L.J. Nat. Nanotechnol. 3 (2008) 168
31. Oh S.H., van Benthem K., Molina S.I., Borisevich A.Y., Luo W., Werner P., Zakharov N.D., Kumar D., Pantelides S.T., and Pennycook S.J. Nano Lett. 8 (2008) 1016
32. Putnam M.C., Filler M.A., Kayes B.M., Kelzenberg M.D., Guan Y., Lewis N.S., Eiler J.M., and Atwater H.A. Nano Lett. 8 (2008) 3109
33. Hulteen J.C., Treichel D.A., Smith M.T., Duval M.L., Jensen T.R., and Van Duyne R.P. J. Phys. Chem., B 103 (1999) 3854
34. Cheung C.L., Nikolić R.J., Reinhardt C.E., and Wang T.F. Nanotechnology 17 (2006) 1339
35. Peng K., Zhang M., Lu A., Wong N., Zhang R., and Lee S. Appl. Phys. Lett. 90 (2007) 163123
36. Huang Z.P., Fang H., and Zhu J. Adv. Mater. 19 (2007) 744
37. Li X., and Bohn P.W. Appl. Phys. Lett. 77 (2000) 2572
38. Douani R., Si-Larbi K., Hadjersi T., Megouda N., and Manseri A. Phys. Status Solidi, A Appl. Res. 205 (2007) 225
39. Chartier C., Bastide S., and Lévy-Clément C. Electrochim. Acta 53 (2008) 5509
40. Fuhrmann B., Leipner H.S., Höche H.-R., Schubert L., Werner P., and Gösele U. Nano Lett. 5 (2005) 2524
41. Shimizu T., Xie T., Nishikawa J., Shingubara S., Senz S., and Gösele U. Adv. Mater. 19 (2007) 917
42. Shimizu T., Zhang Z., Shingubara S., Senz S., and Gösele U. Nano Lett. 9 (2009) 1523