Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Kayes, Brendan M ^a   Atwater, Harry A ^a   Lewis, Nathan S ^b  

^a California Institute of Technology   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DIAGRAM; DIFFUSION LENGTH; NANOROD RADIUS; PHOTOGENERATED CARRIERS; SURFACE RECOMBINATION;

CURRENT DENSITY; DIFFUSION; ELECTRON TRAPS; ENERGY CONVERSION; FABRICATION; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; PHOTOVOLTAIC CELLS; POLYSILICON; SEMICONDUCTOR JUNCTIONS;

SOLAR CELLS;

EID: 20544449654     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1901835     Document Type: Article

References (32)

1. V. Schlosser, IEEE Trans. Electron Devices 31, 610 (1984).
2. M. Imaizumi, T. Ito, M. Yamaguchi, and K. Kaneko, J. Appl. Phys. 81, 7635 (1997).
3. J. Goldberger, R. R. He, Y. F. Zhang, S. W. Lee, H. Q. Yan, H. J. Choi, and P. D. Yang, Nature (London) 422, 599 (2003).
4. L. J. Lauhon, M. S. Gudiksen, D. Wang, and C. M. Lieber, Nature (London) 420, 57 (2002).
5. K. Haraguchi, T. Katsuyama, K. Hiruma, and K. Ogawa, Appl. Phys. Lett. 60, 745 (1992).
6. Y. Y. Wu, R. Fan, and P. D. Yang, Nano Lett. 2, 83 (2002).
7. M. T. Bjork, Nano Lett. 2, 87 (2002).
8. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. C. Smith, and C. M. Lieber, Nature (London) 415, 617 (2002).
9. M. A. Green and S. R. Wenham, Appl. Phys. Lett. 65, 2907 (1994).
10. K. J. Weber, A. W. Blakers, M. J. Stocks, J. H. Babaei, V. A. Everett, A. J. Neuendorf, and P. J. Verlinden, IEEE Electron Device Lett. 25, 37 (2004).
11. K. Taretto and U. Rau, Prog. Photovoltaics 12, 573 (2004).
12. B. Kannan, K. Castelino, and A. Majumdar, Nano Lett. 3, 1729 (2003).
13. See Appendix. Also see, for example, A. Fahrenbruch and R. Bube, Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion (Academic, Stanford, 1983)
14. S. J. Fonash, Solar Cell Device Physics (Academic, New York, 1981).
15. A. Fahrenbruch and R. Bube, Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion (Academic, Stanford, 1983).
16. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).
17. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/Figs/135.gif
18. C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957).
19. In practice, this is not strictly true; it reflects the fact that the model only considers minority carrier transport. In particular, majority-carrier recombination is neglected. In reality, majority carriers will recombine also However, the length scale associated with majority-carrier recombination will be much longer than for minority carriers, and thus, to a good approximation, majority-carrier recombination may be neglected.
20. Air Mass 1.5 Global Spectrum, UNSW Key Center for Photovoltaic Engineering, http://www.pv.unsw.edu.au/am1.5.html. This website is now defunct - for the AM 1.5 spectrum please see http://rredc.nrel.gov/solar/
21. n,k data from Handbook of Optical Constants of Solids, edited by, E. D. Palik, (Academic, Orlando, 1998).
22. R. F. Pierret, Advanced Semiconductor Fundamentals, 2nd ed. (Prentice-Hall, Englewood Cliffs, NJ, 2003), pp. 148, 149, and 154.
23. R. F. Pierret, Semiconductor Fundamentals, 2nd ed. (Addison-Wesley, Reading, MA, 1988), p. 99.
24. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/electric.html; http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaAs/electric.html
25. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/electric.html; http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaAs/electric.html
26. Use was made of information from the website of the Ioffe Physico-Technical Institute, "Electronic archive: New Semiconductor Materials. Characteristics and Properties," http://www.ioffe.rssi.ru/SVA/ NSM/Semicond/Si/electric.html
27. A semiconductor is termed "degenerate" if Ec - Ef <3 kT, or if Ef - Ev <3 kT. This occurs in silicon for dopings above ~1× 1018 cm-3. See R. F. Pierret, in Ref., pp. 115 and 127.
28. The onset of Auger recombination can be estimated by the change in slope in a plot of lifetime vs dopant density. For silicon this occurs at dopant densities of ~5× 1018 cm-3. See http://www.ioffe.rssi.ru/SVA/NSM/Semicond/ Si/Figs/1323.gif
29. Again, use was made of information from the website of the Ioffe Physico-Technical Institute, http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaAs/ electric.html
30. GaAs becomes degenerate for dopings above ~1× 1017 cm-3. See Ref. above.
31. Auger recombination begins to dominate in GaAs at doping levels above ~1× 1019 cm-3. See R. K. Ahrenkiel, R. Ellingson, W. Metzger, D. I. Lubyshev, and W. K. Liu, Appl. Phys. Lett. 78, 1879 (2001).
32. This is simply because there are not enough dopant ions to create the voltage drop required.