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Nano Letters
Volumn 8, Issue 10, 2008, Pages 3456-3460
Single and tandem axial p-i-n nanowire photovoltaic devices
Author keywords

[No Author keywords available]
Indexed keywords

AXIAL MODULATIONS; BULK PROPERTIES; CRYSTALLINE SI; CURRENT VOLTAGES; DIODE QUALITY FACTORS; DIODE STRUCTURES; ILLUMINATION INTENSITIES; INTRINSIC PERFORMANCE; MAXIMUM EFFICIENCIES; NEW CONCEPTS; OPEN CIRCUITS; PHOTOVOLTAIC DEVICES; PHOTOVOLTAICS; SCANNING ELECTRON MICROSCOPY IMAGES; SHORT-CIRCUIT CURRENT DENSITIES; SHORT-CIRCUIT CURRENTS; SILICON NANOWIRES; SOLAR ENERGY CONVERSIONS; SYNTHETIC CONTROLS; TANDEM SOLAR CELLS; TEMPERATURE DEPENDENCES;
EID: 57649209784     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl8023438     Document Type: Article
Times cited : (406)
References (23)
  • 10
    • 84868901842 scopus 로고    scopus 로고
    • The growth substrate consisted of 250 nm Au nanoparticles immobilized on poly-L-lysine treated 600 nm SiO2/Si slivers. The chamber temperature and pressure were held constant at 450 °C and 40 torr, respectively, and the precursor gases silane (2 sccm, dioborane (5 sccm, 100 ppm, and phosphine (1 sccm, 1000 ppm) were introduced as appropriate to form intrinsic, p-type, and n-type regions on the axial NW. The carrier gas was H2 (60 sccm, Under these conditions and NW diameter in the range of 200-250 nm, the growth rate is ∼1 μm/min. The dopant feed-in ratios (Si-B/P) were 2000:1 for both p- and n-type segments. For the tandem structures, the two i-segments were 2 μu long, the n+ and p+ regions were 0.5 μm in length, and the Si-B/P ratios were both 500:1 in the heavily doped n+ and p+ regions
    • 2 (60 sccm). Under these conditions and NW diameter in the range of 200-250 nm, the growth rate is ∼1 μm/min. The dopant feed-in ratios (Si-B/P) were 2000:1 for both p- and n-type segments. For the tandem structures, the two i-segments were 2 μu long, the n+ and p+ regions were 0.5 μm in length, and the Si-B/P ratios were both 500:1 in the heavily doped n+ and p+ regions.
  • 11
    • 84868897797 scopus 로고    scopus 로고
    • 2 flow of 1 L/min. The oxide was removed by submerging the substrates in commercial buffered hydrogen fluoride (BHF) solution (Transene Company Inc.) for 5 s.
    • 2 flow of 1 L/min. The oxide was removed by submerging the substrates in commercial buffered hydrogen fluoride (BHF) solution (Transene Company Inc.) for 5 s.
  • 12
    • 84868897796 scopus 로고    scopus 로고
    • SiNWs were etched with BHF for 7 s and then immersed in a 60 °C KOH/isopropanol solution 20 wt % KOH in water; 3:1 for 7 s. SEM studies reveal that the etching rate for i-type Si is similar to that for p-type, leading to a 52% and 46%, respectively, reduction in the original diameter for above conditions, while there is negligible etching for n-type Si.
    • SiNWs were etched with BHF for 7 s and then immersed in a 60 °C KOH/isopropanol solution (20 wt % KOH in water; 3:1 vol/vol) for 7 s. SEM studies reveal that the etching rate for i-type Si is similar to that for p-type, leading to a 52% and 46%, respectively, reduction in the original diameter for above conditions, while there is negligible etching for n-type Si.
  • 13
    • 84868912127 scopus 로고    scopus 로고
    • 2 = 1 sun) with a power meter (Coherent, Field Master). For temperature dependent experiments (Figure 3C), the probe station (Desert Cryogenics, Model TTP4) tip and substrate temperatures (LakeShore, Model 331 temperature controller) were within 5% of each other.
    • 2 = 1 sun) with a power meter (Coherent, Field Master). For temperature dependent experiments (Figure 3C), the probe station (Desert Cryogenics, Model TTP4) tip and substrate temperatures (LakeShore, Model 331 temperature controller) were within 5% of each other.
  • 17
    • 84868912128 scopus 로고    scopus 로고
    • The projected area used to calculate efficiency was approximated as the length of the intrinsic region and the depletion widths in the p-and n- regions multiplied by the NW diameter. If the entire length between the contacts of the p-i 4 μm, n axial device was used to estimate area, the efficiency would be 0.15% and Jsc, 1.4 mA/cm2. We believe that the smaller projected area corresponding primarily to the i-segment is the best measure of the device performance, because of the short depletion widths and minority carrier diffusion lengths in the heavily doped p- and n-regions
    • 2. We believe that the smaller projected area corresponding primarily to the i-segment is the best measure of the device performance, because of the short depletion widths and minority carrier diffusion lengths in the heavily doped p- and n-regions.
  • 18
    • 84868897799 scopus 로고    scopus 로고
    • oc will depend logarithmically on intensity (Figure 3A).
    • oc will depend logarithmically on intensity (Figure 3A).

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.