Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 452-455

  Das Kanungo, P ^a   Wolfsteller, A ^a   Zakharov, N D ^a   Werner, P ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

MBE; Nanowire; Silicon Germanium

Indexed keywords

BICMOS TECHNOLOGY; CARRIER CONCENTRATION; CRYSTAL GROWTH; DISTILLATION; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; GERMANIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WIRES; SILICON;

BAND DIAGRAMS; CURRENT CONDUCTIONS; ELECTRICAL CONDUCTIVITIES; ELECTRICAL PROPERTIES; HETEROSTRUCTURE; I - V CURVES; I-V CHARACTERISTICS; MBE; MICRO MANIPULATORS; NANOWIRE; OHMIC BEHAVIORS; SCANNING ELECTRON MICROSCOPES; SI/SIGE; SILICON-GERMANIUM; SINGLE-CRYSTALLINE; SURFACE STATE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 61349084771     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.021     Document Type: Article

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