Vertically aligned Si intrananowire p-n diodes by large-area epitaxial growth

Applied Physics Letters

Volumn 94, Issue 17, 2009, Pages

  Kim, Cheol Joo ^a   Lee, Donghun ^a   Lee, Hyun Seung ^a   Lee, Geunhee ^a   Kim, Gil Sung ^a   Jo, Moon Ho ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING PROFILES; IN-SITU DOPING; INTEGRATED ELECTRONICS; LOCAL PROBES; P-N DIODES; P-N JUNCTIONS; SI NANOWIRES; VERTICALLY ALIGNED;

DOPING (ADDITIVES); ELECTRIC WIRE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65449181639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3126037     Document Type: Article

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