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Volumn 19, Issue 33, 2008, Pages
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Growth of one-dimensional Si/SiGe heterostructures by thermal CVD
a
a
CEA GRENOBLE
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTALS;
ELECTRIC WIRE;
ELECTRON MICROSCOPES;
GERMANIUM;
MATERIALS SCIENCE;
MEASUREMENT THEORY;
NANOSTRUCTURED MATERIALS;
OPTICAL DESIGN;
POTASSIUM COMPOUNDS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GERMANIUM COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SILICON ALLOYS;
SUPERLATTICES;
TRANSMISSION ELECTRON MICROSCOPY;
APPLIED MATERIALS (CO);
BRIGHT-FIELD (BF);
COMPLEMENTARY TECHNIQUES;
DIRECT FABRICATION;
ELECTRONIC MICROSCOPY;
ENERGY DISPERSIVE X RAY SPECTROSCOPY (EDXS);
ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY (EFTEM);
FIGURE-OF-MERIT (FOM);
HAADF STEM;
HETEROSTRUCTURES;
HIGH ANGLE ANNULAR DARK FIELD (HAADF);
LOW DIMENSIONALITY;
MONOCRYSTALLINE (MD);
NANO-HETEROSTRUCTURES;
NEW PROCESSES;
ONE DIMENSIONAL SUPERLATTICES;
ONE-DIMENSIONAL;
SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);
SELECTED AREA ELECTRON DIFFRACTION (SAED);
THIN LAYERING;
ELECTRONS;
MONOCRYSTALLINE NANOWIRE;
NANOMATERIAL;
NANOWIRE;
SILICON;
SILICON GERMANIUM;
ARTICLE;
ELECTRON TRANSPORT;
ENERGY DISPERSIVE X RAY SPECTROSCOPY;
ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY;
HIGH ANGLE ANNULAR DARK FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY;
PHONON;
PRIORITY JOURNAL;
SCANNING TRANSMISSION ELECTRON MICROSCOPY;
SELECTED AREA ELECTRON DIFFRACTION;
TRANSMISSION ELECTRON MICROSCOPY;
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EID: 47349129346
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/19/33/335603 Document Type: Article |
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Times cited : (16)
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References (30)
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