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Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1464-1466

On the identification of the oxygen vacancy in HfO2

(3) Clark, S J a Lin, L b Robertson, J b

a DURHAM UNIVERSITY (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

Dielectric; Electron spin resonance; HfO2; High K; Oxygen vacancy

Indexed keywords

ACTIVE DEFECTS; DIELECTRIC; ELECTRON LOCALIZATIONS; HFO2; HIGH K; METAL GATE STACK; OXYGEN VACANCY DEFECTS; SYMMETRY-BREAKING; VOLTAGE INSTABILITY;

DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; HAFNIUM OXIDES; OXYGEN; RESONANCE; SPIN DYNAMICS;

OXYGEN VACANCIES;

EID: 79958027008 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.078 Document Type: Conference Paper

Times cited : (23)

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