-
1
-
-
79959345348
-
Evaluation of EUV resist materials for use at the 32 nm halfpitch node
-
T. Wallow, C. Higgins, R. Brainard, K. Petrillo, W. Montgomery, C. Koay, G. Denbeaux, O. Wood, Y. Wei "Evaluation of EUV resist materials for use at the 32 nm halfpitch node" Proc. SPIE 6921 6921-56, 2008
-
(2008)
Proc. SPIE
, vol.6921
, pp. 6921-6956
-
-
Wallow, T.1
Higgins, C.2
Brainard, R.3
Petrillo, K.4
Montgomery, W.5
Koay, C.6
Denbeaux, G.7
Wood, O.8
Wei, Y.9
-
2
-
-
79959332235
-
Benchmarking of commercial EUVL resists at SEMATECH
-
A. Ma, J. Park, K. Dean, S. Wurm, P. Naulleau "Benchmarking of commercial EUVL resists at SEMATECH" Proc. SPIE 6921 6921-137, 2008
-
(2008)
Proc. SPIE
, vol.6921
, pp. 6921-6137
-
-
Ma, A.1
Park, J.2
Dean, K.3
Wurm, S.4
Naulleau, P.5
-
3
-
-
65849391428
-
Theoretical analysis of energy degradation of electrons in the resists
-
M. Toriumi "Theoretical analysis of energy degradation of electrons in the resists" Proc. SPIE 7273 7273-162, 2009
-
(2009)
Proc. SPIE
, vol.7273
, pp. 7273-7162
-
-
Toriumi, M.1
-
4
-
-
65849468053
-
EUV resist requirements: Absorbance and acid yield
-
R. Gronheid, C. Fonseca, M. Leeson, J. Adams, J. Strahan, C. Willson, B. Smith "EUV resist requirements: absorbance and acid yield" Proc. SPIE 7273 7273-167, 2009
-
(2009)
Proc. SPIE
, vol.7273
, pp. 7273-7167
-
-
Gronheid, R.1
Fonseca, C.2
Leeson, M.3
Adams, J.4
Strahan, J.5
Willson, C.6
Smith, B.7
-
5
-
-
65849365049
-
Development of new phenylcalix[4]resorcinarene: Its application to positive-tone molecular resist for EB and EUV lithography
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M. Echigo, D. Oguro "Development of new phenylcalix[4]resorcinarene: its application to positive-tone molecular resist for EB and EUV lithography" Proc. SPIE 7273 7273-155, 2009
-
(2009)
Proc. SPIE
, vol.7273
, pp. 7273-7155
-
-
Echigo, M.1
Oguro, D.2
-
6
-
-
65849270218
-
Development of polymers for non-CAR resists for EUV lithography
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A. Whittaker, I. Blakey, J. Blinco, K. Jack, K. Lawrie, H. Liu, A. Yu, M. Leeson, W. Yeuh, T. Younkin "Development of polymers for non-CAR resists for EUV lithography" Proc. SPIE 7273 7273-175, 2009
-
(2009)
Proc. SPIE
, vol.7273
, pp. 7273-7175
-
-
Whittaker, A.1
Blakey, I.2
Blinco, J.3
Jack, K.4
Lawrie, K.5
Liu, H.6
Yu, A.7
Leeson, M.8
Yeuh, W.9
Younkin, T.10
-
7
-
-
65849441008
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Development of novel positive-tone resists for EUVL
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T. Owada, A. Yomogita, T. Kashiwamura, T. Kusaba, S. Miyamoto, T. Takeya "Development of novel positive-tone resists for EUVL" Proc. SPIE 7273 7273-156, 2009
-
(2009)
Proc. SPIE
, vol.7273
, pp. 7273-7156
-
-
Owada, T.1
Yomogita, A.2
Kashiwamura, T.3
Kusaba, T.4
Miyamoto, S.5
Takeya, T.6
-
8
-
-
65849299032
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Resist material design to improve sensitivity in EUV lithography
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H. Tsubaki, T. Tsuchihashi, K. Yamashita, T. Tsuchimura "Resist material design to improve sensitivity in EUV lithography" Proc. SPIE 7273 7273-31, 2009
-
(2009)
Proc. SPIE
, vol.7273
, pp. 7273-7231
-
-
Tsubaki, H.1
Tsuchihashi, T.2
Yamashita, K.3
Tsuchimura, T.4
-
9
-
-
65849192260
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Lithographic evaluation and chemical modeling of acid amplifiers used in EUV photoresists
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R. Brainard, C. Higgins, S. Kruger, S. Revuru, B. Cardineau, S. Gibbons, D. Freedman, H. Solak, W. Yueh, T. Younkin "Lithographic Evaluation and Chemical Modeling of Acid Amplifiers used in EUV Photoresists" Proc. SPIE 7273 7273Q-1, 2009
-
(2009)
Proc. SPIE
, vol.7273
-
-
Brainard, R.1
Higgins, C.2
Kruger, S.3
Revuru, S.4
Cardineau, B.5
Gibbons, S.6
Freedman, D.7
Solak, H.8
Yueh, W.9
Younkin, T.10
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10
-
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65849338171
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Aryl sulfonates as neutral photoacid generators (PAGs) for EUV lithography
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R. Sulc, J. Blackwell, T. Younkin, E. Putna, K. Esswein, A. DiPasquale, R. Callahan, H. Tsubaki, T. Tsuchihashi "Aryl sulfonates as neutral photoacid generators (PAGs) for EUV lithography" Proc. SPIE 7273 7273-33, 2009
-
(2009)
Proc. SPIE
, vol.7273
, pp. 7273-7233
-
-
Sulc, R.1
Blackwell, J.2
Younkin, T.3
Putna, E.4
Esswein, K.5
DiPasquale, A.6
Callahan, R.7
Tsubaki, H.8
Tsuchihashi, T.9
-
12
-
-
70249124604
-
Underlayer designs to enhance EUV resists performance
-
D. J. Guerrero, H. Xu, R. Mercado, J. Blackwell "Underlayer designs to enhance EUV resists performance" J. Photopolym. Sci. Tech. 22(1), 117-122, 2009
-
(2009)
J. Photopolym. Sci. Tech.
, vol.22
, Issue.1
, pp. 117-122
-
-
Guerrero, D.J.1
Xu, H.2
Mercado, R.3
Blackwell, J.4
-
13
-
-
65849111019
-
Underlayer designs to enhance the performance of EUV resists
-
H. Xu, J. Blackwell, T. Younkin, K. Min "Underlayer designs to enhance the performance of EUV resists" Proc. SPIE 7273 7273-109, 2009
-
(2009)
Proc. SPIE
, vol.7273
, pp. 7273-7109
-
-
Xu, H.1
Blackwell, J.2
Younkin, T.3
Min, K.4
-
14
-
-
65849383998
-
Sensitivity of EUV resists to out-of-band radiation
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J. Roberts, R. Bristol, T. Younkin, T. Fedynyshyn, D. Astolfi, A. Cabral "Sensitivity of EUV resists to out-of-band radiation" Proc. SPIE 7273 7273-121, 2009
-
(2009)
Proc. SPIE
, vol.7273
, pp. 7273-7121
-
-
Roberts, J.1
Bristol, R.2
Younkin, T.3
Fedynyshyn, T.4
Astolfi, D.5
Cabral, A.6
-
15
-
-
67149136864
-
Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool
-
S. George, P. Naulleau, S. Rekawa, E. Gullikson, C. Kemp "Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool" Proc. SPIE 7271 7271-33, 2009
-
(2009)
Proc. SPIE
, vol.7271
, pp. 7271-7233
-
-
George, S.1
Naulleau, P.2
Rekawa, S.3
Gullikson, E.4
Kemp, C.5
-
16
-
-
77953394961
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EUV lithography for 22nm half pitch and beyond: Exploring resolution, LWR, and sensitivity tradeoffs
-
E. Putna, T. Younkin, R. Caudillo, M. Chandhok "EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs" Proc. SPIE 7636 7636-24, 2010
-
(2010)
Proc. SPIE
, vol.7636
, pp. 7636-7624
-
-
Putna, E.1
Younkin, T.2
Caudillo, R.3
Chandhok, M.4
-
17
-
-
77953451247
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Characterization of line-edge roughness (LER) propagation from resists: Underlayer interfaces in ultrathin resist films
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S. George, P. Naulleau, A. Krishnamoorthy, Z. Wu, E. Rutter, J. Kennedy, S. Xie, K. Flanigan, T. Wallow "Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films" Proc. SPIE 7636 7636-4, 2010
-
(2010)
Proc. SPIE
, vol.7636
, pp. 7636-7634
-
-
George, S.1
Naulleau, P.2
Krishnamoorthy, A.3
Wu, Z.4
Rutter, E.5
Kennedy, J.6
Xie, S.7
Flanigan, K.8
Wallow, T.9
-
18
-
-
77953518257
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EUV RLS performance tradeoffs for a polymer bound PAG resist
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R. Gronheid, A. Vaglio Pret, B. Rathsack, J. Hooge, S. Scheer, K. Nafus, H. Shite, J. Kitano "EUV RLS performance tradeoffs for a polymer bound PAG resist" Proc. SPIE 7639 7639-21, 2010
-
(2010)
Proc. SPIE
, vol.7639
, pp. 7639-7621
-
-
Gronheid, R.1
Vaglio Pret, A.2
Rathsack, B.3
Hooge, J.4
Scheer, S.5
Nafus, K.6
Shite, H.7
Kitano, J.8
-
19
-
-
77953411741
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Patterning with EUVL: The road to 22nm node
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H. Kim, H. Na, K. Cho, C. Park, T. Yasue, S. Mayya, H. Cho "Patterning with EUVL: the road to 22nm node" Proc. SPIE 7636 7636-25, 2010
-
(2010)
Proc. SPIE
, vol.7636
, pp. 7636-7625
-
-
Kim, H.1
Na, H.2
Cho, K.3
Park, C.4
Yasue, T.5
Mayya, S.6
Cho, H.7
-
20
-
-
0004932883
-
X-ray interactions: Photoabsorption, scattering, transmission, and reflection at E = 50-30,000 eV, Z = 1-92
-
B. Henke, E. Gullikson and J. Davis "X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92" Atomic Data and Nuclear Data Tables, Volume 54, Issue 2, 181-342. 1993.
-
(1993)
Atomic Data and Nuclear Data Tables
, vol.54
, Issue.2
, pp. 181-342
-
-
Henke, B.1
Gullikson, E.2
Davis, J.3
-
21
-
-
77953365587
-
Absorption and loss of film thickness in photoresists and underlayer materials upon irradiation at 13.5 nm
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G. Ho, F. Kang, H. Fu, Y. Shih, H. Fung, W. Ku, Y. Cheng, P. Wu "Absorption and loss of film thickness in photoresists and underlayer materials upon irradiation at 13.5 nm" Proc. SPIE 7636 7636-106, 2010
-
(2010)
Proc. SPIE
, vol.7636
, pp. 7636-7106
-
-
Ho, G.1
Kang, F.2
Fu, H.3
Shih, Y.4
Fung, H.5
Ku, W.6
Cheng, Y.7
Wu, P.8
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