EUV RLS performance tradeoffs for a polymer bound PAG resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7639, Issue , 2010, Pages

  Gronheid, Roel ^a   Vaglio Pret, Alessandro ^a   Rathsack, Benjamen ^b   Hooge, Joshua ^b   Scheer, Steven ^b   Nafus, Kathleen ^c   Shite, Hideo ^c   Kitano, Junichi ^c  

^a IMEC   (Belgium)

^b TOKYO ELECTRON AMERICA INC   (United States)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

EUV; lithography simulation; LWR; resist sensitivity; resolution

Indexed keywords

ABSORBANCES; ACID DIFFUSION LENGTH; CHEMICALLY AMPLIFIED RESIST; EUV LITHOGRAPHY SIMULATION; EXCITATION MECHANISMS; FITTING RESULTS; FORMATION KINETICS; HIGH CONFIDENCE; LINEWIDTH ROUGHNESS; NEGATIVE IMPACTS; PERFORMANCE TRADE-OFF; PHYSICAL SIGNIFICANCE; POLYMER BOUND PAG; RESIST MODELS; RESIST SENSITIVITY; SECONDARY ELECTRONS;

ACIDS; ELECTRON BEAM LITHOGRAPHY; LOADING; PHOTORESISTS; POLYMERS; ROUGHNESS MEASUREMENT; SECONDARY EMISSION;

QUANTUM EFFICIENCY;

EID: 77953518257     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.847489     Document Type: Conference Paper

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