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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

EUV resist requirements: Absorbance and acid yield

(7) Gronheid, Roei a Fonseca, Carlos b Leeson, Michael J c Adams, Jacob R a,d Strahan, Jeffrey R d Willson, C Grant d Smith, Bruce W e

a IMEC (Belgium)

b TOKYO ELECTRON AMERICA INC (United States)

c Intel Corporation Belgium (Belgium)

d UNIVERSITY OF TEXAS AT AUSTIN (United States)

e ROCHESTER INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Absorbance; EUV; Interference lithography; Resist; Simulation

Indexed keywords

ABSORBANCE; EUV; INTERFERENCE LITHOGRAPHY; RESIST; SIMULATION;

FLUORINE; PHOTOLITHOGRAPHY; ROUGHNESS MEASUREMENT;

ULTRAVIOLET DEVICES;

EID: 65849468053 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.814716 Document Type: Conference Paper

Times cited : (34)

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