Aryl sulfonates as neutral photoacid generators (PAGs) for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Sulc, Robert ^a   Blackwell, James M ^a   Younkin, Todd R ^a   Putna, E Steve ^a   Esswein, Katherine ^b   Dipasquale, Antonio G ^b   Callahan, Ryan ^c   Tsubaki, Hideaki ^d   Tsuchihashi, Tooru ^d  

^a INTEL CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Fujifilm Electronic Materials USA Inc   (United States)

^d FUJIFILM CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACID GENERATION EFFICIENCY; ARYL SULFONATES; EUV LITHOGRAPHY; FACTOR ANALYSIS; FRAGMENTATION PATTERNS; MOLECULAR SIMULATIONS; NONIONIC; OUTGASSING RATE; PHOTOACID GENERATORS; PHOTORESIST MATERIALS; RESIST FORMULATIONS; RESIST SENSITIVITY; TRIFLATE;

ELECTRON BEAM LITHOGRAPHY; EXTREME ULTRAVIOLET LITHOGRAPHY; SUGAR (SUCROSE); SUPERCONDUCTING WIRE; ULTRAVIOLET DEVICES;

PHOTORESISTORS;

EID: 65849338171     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814279     Document Type: Conference Paper

References (16)

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11. 3 = 81.4.
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16. Triphenylsulfonium triflate may not be the perfect control for these experiments, but the corresponding triphenylsulfonium triflinate is not available. It is, therefore, unclear whether the lower photospeed for H is actually related to a lower acid generation efficiency (AGE) or to the weaker acidity and reduced deprotection rate that would be expected of the weaker triflinic acid. The use of photoresists designed for use with weaker acids may help shed light on this matter.