|
Volumn 6921, Issue , 2008, Pages
|
Benchmarking commercial EUVL resists at SEMATECH
|
Author keywords
Extreme ultraviolet; Lithography; LWR; Photoresist; Sensitivity
|
Indexed keywords
DEPTH OF FOCUS;
EUV RESISTS;
EXPOSURE LATITUDE;
EXTREME ULTRAVIOLET;
LAWRENCE BERKELEY NATIONAL LABORATORY;
LINEWIDTH ROUGHNESS;
LWR;
MICRO-EXPOSURE TOOL;
NEXT GENERATION LITHOGRAPHY;
POWER REQUIREMENT;
PROCESS WINDOW;
SEMATECH;
SENSITIVITY;
BENCHMARKING;
DEGASSING;
EXTREME ULTRAVIOLET LITHOGRAPHY;
LIGHT SENSITIVE MATERIALS;
PHOTORESISTS;
PHOTOSENSITIVITY;
ROUGHNESS MEASUREMENT;
LITHOGRAPHY;
|
EID: 79959332235
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.775037 Document Type: Conference Paper |
Times cited : (28)
|
References (6)
|