Development of novel positive-tone resists for EUVL

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Owada, Takanori ^a   Yomogita, Akinori ^a   Kashiwamura, Takashi ^a   Kusaba, Toshiaki ^a   Miyamoto, Shinji ^a   Takeya, Tetsuro ^a  

^a IDEMITSU KOSAN CO LTD   (Japan)

Author keywords

Chemical amplified resist; EB lithography; EUV lithography; Low molecular weight resist

Indexed keywords

CHEMICAL AMPLIFIED RESIST; EB LITHOGRAPHY; EUV LITHOGRAPHY; EXTREME ULTRAVIOLETS; FIELD EXPOSURE; HIGH RESOLUTION; LEADING EDGE TECHNOLOGY; LOW MOLECULAR WEIGHT; LOW MOLECULAR WEIGHT RESIST; MATERIAL PROPERTY; POSITIVE-TONE RESISTS; PROTECTING GROUP;

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; MOLECULAR WEIGHT; ULTRAVIOLET DEVICES;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 65849441008     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813631     Document Type: Conference Paper

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