Resist materials design to improve sensitivity in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Tsubaki, Hideaki ^a   Tsuchihashi, Tooru ^a   Yamashita, Katsuhiro ^a   Tsuchimura, Tomotaka ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

Chemically amplified resist; EUV lithography; Photoacid generator; Polymer matrix; Sensitivity

Indexed keywords

ACID GENERATION; CHEMICALLY AMPLIFIED RESIST; EUV LITHOGRAPHY; EUV RESISTS; IONIZATION FREQUENCY; LEAST-SQUARE FITTING; LINEAR RELATIONSHIPS; PHOTOACID GENERATOR; POLYMER LOADING; POLYMER STRUCTURE; POSITIVE EFFECTS; REDUCTION POTENTIAL; RESIST MATERIALS; SENSITIVITY; SENSITIVITY IMPROVEMENTS;

ACIDS; ELECTRON AFFINITY; ELECTRON BEAM LITHOGRAPHY; EXTREME ULTRAVIOLET LITHOGRAPHY; IONIZATION; PHOTORESISTORS; PHOTORESISTS; POLYMERS; ULTRAVIOLET DEVICES;

LOADING;

EID: 65849299032     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814086     Document Type: Conference Paper

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18. Unpublished results obtained from acid titration experiment by a UV/vis spectrophotometer.
19. The Esize reported here is consistent with that reported previously (see reference 3).
20. The Esize reported here differs from the values reported previously (see reference 3). The previous Esize is divided by 0.668 to correct calibration error.