Absorption and loss of film thickness in photoresists and underlayer materials upon irradiation at 13.5 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Ho, Grace H ^a   Kang, Fu H ^a   Fu, Huang W ^b   Shih, Yu H ^a   Fung, Hok S ^b   Ku, Wan P ^a   Cheng, Yu S ^a   Wu, Pei J ^a  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

13.5 nm; absorption coefficient; exposure kinetics; Extreme ultraviolet (EUV); outgassing; reflectivity

Indexed keywords

13.5 NM; ABLATION RATES; ABSORPTION COEFFICIENT; ABSORPTION COEFFICIENTS; BEAM LINES; CARBON ATOMS; DIFFUSION PROCESS; EXTREME ULTRAVIOLET; EXTREME ULTRAVIOLETS; FIRST-ORDER; LOSS RATES; OUTGASSING RATE; PHOTOABSORPTIONS; POWER DENSITIES; PROFILOMETERS; REFLECTIVITY CURVE; RESEARCH CENTER; ROUND ROBIN; THICKNESS LOSS; THICKNESS PROFILES; UNDERLAYERS;

ABLATION; ABSORPTION; DEGASSING; MAGNETIC FILMS; PHOTOCHEMICAL REACTIONS; RADIATION; REACTION KINETICS; REFRACTIVE INDEX;

REFLECTION;

EID: 77953365587     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.851280     Document Type: Conference Paper

References (14)

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