Lithographie evaluation and chemical modeling of acid amplifiers used in EUV photoresists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Brainard, Robert ^a   Higgins, Craig ^a   Kruger, Seth ^a   Revuru, Srividya ^a   Cardineau, Brian ^a   Gibbons, Sarah ^b   Freedman, Dan ^b   Solak, Harun ^c   Yueh, Wang ^d   Younkin, Todd ^d  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

^d INTEL CORPORATION   (United States)

Author keywords

Acid amplifiers; EUV; Photoresists; Z Parameter

Indexed keywords

ACID AMPLIFIERS; CHEMICAL MODELING; DECOMPOSITION PATHWAY; ENTHALPIES OF ACTIVATION; EUV; EXPOSURE LATITUDE; KINETIC MODELING; LINE EDGE ROUGHNESS; LITHOGRAPHIC PROPERTIES; LITHOGRAPHIE; POLYMER RESIST; SULFONIC ACID; THERMAL STABILITY; Z-PARAMETER;

CHEMICAL STABILITY; PHOTORESISTORS; PHOTORESISTS; ROUGHNESS MEASUREMENT; SURFACE TREATMENT; SYSTEM STABILITY; THERMODYNAMIC STABILITY; ULTRAVIOLET DEVICES;

ACIDS;

EID: 65849192260     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814308     Document Type: Conference Paper

References (17)

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