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Applied Physics Letters

Volumn 96, Issue 24, 2010, Pages

Resistive switching behaviors of ZnO nanorod layers

(4) Chang, Wen Yuan a Lin, Chin An b He, Jr Hau b Wu, Tai Bor a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; HYDROTHERMAL PROCESS; INDIUM TIN OXIDE ELECTRODES; NON-VOLATILE MEMORY APPLICATION; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; VERTICALLY ALIGNED; ZINC INTERSTITIALS; ZNO; ZNO NANOROD;

NANORODS; OXYGEN; OXYGEN VACANCIES; SWITCHING; SWITCHING SYSTEMS; TIN; TITANIUM COMPOUNDS; ZINC;

ZINC OXIDE;

EID: 77953797149 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3453450 Document Type: Article

Times cited : (127)

References (20)

1
- 0036575748
- Controlled growth of ZnO nanowires and their optical properties
- DOI 10.1002/1616-3028(20020517)12:5<323::AID-ADFM323>3.0.CO;2-G
- P. Yang, H. Yan, S. Mao, R. Russo, J. Johnson, R. Saykally, N. Morris, J. Pham, R. He, and H. Choi, Adv. Funct. Mater. AFMDC6 1616-301X 12, 323 (2002). 10.1002/1616-3028(20020517)12:5<323::AID-ADFM323>3.0.CO;2-G (Pubitemid 34613595)
- (2002) Advanced Functional Materials , vol.12 , Issue.5 , pp. 323-331
- Yang, P.¹ Yan, H.² Mao, S.³ Russo, R.⁴ Johnson, J.⁵ Saykally, R.⁶ Morris, N.⁷ Pham, J.⁸ He, R.⁹ Choi, H.-J.¹⁰

2
- 62649102691
- MIGIEA 0927-796X,. 10.1016/j.mser.2009.02.001
- Z. L. Wang, Mater. Sci. Eng. R. MIGIEA 0927-796X 64, 33 (2009). 10.1016/j.mser.2009.02.001
- (2009) Mater. Sci. Eng. R. , vol.64 , pp. 33
- Wang, Z.L.¹

3
- 69849108014
- JACSAT 0002-7863,. 10.1021/ja8095575
- B. Yuhas and P. Yang, J. Am. Chem. Soc. JACSAT 0002-7863 131, 3756 (2009). 10.1021/ja8095575
- (2009) J. Am. Chem. Soc. , vol.131 , pp. 3756
- Yuhas, B.¹ Yang, P.²

4
- 38349103053
- APPLAB 0003-6951,. 10.1063/1.2834852
- W. Y. Chang, Y. C. Lai, T. B. Wu, S. F. Wang, F. Chen, and M. J. Tsai, Appl. Phys. Lett. APPLAB 0003-6951 92, 022110 (2008). 10.1063/1.2834852
- (2008) Appl. Phys. Lett. , vol.92 , pp. 022110
- Chang, W.Y.¹ Lai, Y.C.² Wu, T.B.³ Wang, S.F.⁴ Chen, F.⁵ Tsai, M.J.⁶

5
- 45149087197
- APPLAB 0003-6951,. 10.1063/1.2945278
- N. Xu, L. F. Liu, X. Sun, X. Y. Liu, D. D. Han, Y. Wang, R. Q. Han, J. F. Kang, and B. Yu, Appl. Phys. Lett. APPLAB 0003-6951 92, 232112 (2008). 10.1063/1.2945278
- (2008) Appl. Phys. Lett. , vol.92 , pp. 232112
- Xu, N.¹ Liu, L.F.² Sun, X.³ Liu, X.Y.⁴ Han, D.D.⁵ Wang, Y.⁶ Han, R.Q.⁷ Kang, J.F.⁸ Yu, B.⁹

6
- 23944447615
- 2 thin films grown by atomic-layer deposition
- DOI 10.1063/1.2001146, 033715
- B. J. Choi, D. S. Jeong, S. K. Kim, C. S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. J. Tiedke, J. Appl. Phys. JAPIAU 0021-8979 98, 033715 (2005). 10.1063/1.2001146 (Pubitemid 41204789)
- (2005) Journal of Applied Physics , vol.98 , Issue.3 , pp. 1-10
- Choi, B.J.¹ Jeong, D.S.² Kim, S.K.³ Rohde, C.⁴ Choi, S.⁵ Oh, J.H.⁶ Kim, H.J.⁷ Hwang, C.S.⁸ Szot, K.⁹ Waser, R.¹⁰ Reichenberg, B.¹¹ Tiedke, S.¹²

7
- 0000748226
- APPLAB 0003-6951,. 10.1063/1.126464
- S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. APPLAB 0003-6951 76, 2749 (2000). 10.1063/1.126464
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2749
- Liu, S.Q.¹ Wu, N.J.² Ignatiev, A.³

8
- 79956011470
- Organic electrical bistable devices and rewritable memory cells
- DOI 10.1063/1.1473234
- L. P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. APPLAB 0003-6951 80, 2997 (2002). 10.1063/1.1473234 (Pubitemid 34599224)
- (2002) Applied Physics Letters , vol.80 , Issue.16 , pp. 2997
- Ma, L.P.¹ Liu, J.² Yang, Y.³

9
- 67650102619
- ADVMEW 0935-9648,. 10.1002/adma.200900375
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. (Weinheim, Ger.) , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

10
- 67949097936
- TDIMD5 0163-1918
- H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. -J. Tsai, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2008, 297.
- (2008) Tech. Dig. - Int. Electron Devices Meet. , pp. 297
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Chen, Y.S.⁴ Wang, C.C.⁵ Tzeng, P.J.⁶ Lin, C.H.⁷ Chen, F.⁸ Lien, C.H.⁹ Tsai, M.-J.¹⁰

11
- 77953736656
- TDIMD5 0163-1918.
- Y. H. Tseng, C. -E. Huang, C. -H. Kuo, Y. -D. Chih, and C. J. Lin, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 109.
- (2009) Tech. Dig. - Int. Electron Devices Meet. , pp. 109
- Tseng, Y.H.¹ Huang, C.-E.² Kuo, C.-H.³ Chih, Y.-D.⁴ Lin, C.J.⁵

12
- 68249108599
- APPLAB 0003-6951,. 10.1063/1.3193656
- W. Y. Chang, K. J. Cheng, J. M. Tsai, H. J. Chen, F. Chen, M. J. Tsai, and T. B. Wu, Appl. Phys. Lett. APPLAB 0003-6951 95, 042104 (2009). 10.1063/1.3193656
- (2009) Appl. Phys. Lett. , vol.95 , pp. 042104
- Chang, W.Y.¹ Cheng, K.J.² Tsai, J.M.³ Chen, H.J.⁴ Chen, F.⁵ Tsai, M.J.⁶ Wu, T.B.⁷

13
- 33745013331
- 2
- DOI 10.1063/1.2210087
- D. C. Kim, M. J. Lee, S. E. Ahn, S. Seo, J. C. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. -I. Chung, J. T. Moon, and B. I. Ryu, Appl. Phys. Lett. APPLAB 0003-6951 88, 232106 (2006). 10.1063/1.2210087 (Pubitemid 43877731)
- (2006) Applied Physics Letters , vol.88 , Issue.23 , pp. 232106
- Kim, D.C.¹ Lee, M.J.² Ahn, S.E.³ Seo, S.⁴ Park, J.C.⁵ Yoo, I.K.⁶ Baek, I.G.⁷ Kim, H.J.⁸ Yim, E.K.⁹ Lee, J.E.¹⁰ Park, S.O.¹¹ Kim, H.S.¹² Chung, U.-I.¹³ Moon, J.T.¹⁴ Ryu, B.I.¹⁵

14
- 74249119926
- ESLEF6 1099-0062,. 10.1149/1.3267050
- S. M. Yu, B. Gao, H. B. Dai, B. Sun, L. F. Liu, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, Electrochem. Solid-State Lett. ESLEF6 1099-0062 13, H36 (2010). 10.1149/1.3267050
- (2010) Electrochem. Solid-State Lett. , vol.13 , pp. 36
- Yu, S.M.¹ Gao, B.² Dai, H.B.³ Sun, B.⁴ Liu, L.F.⁵ Liu, X.Y.⁶ Han, R.Q.⁷ Kang, J.F.⁸ Yu, B.⁹

15
- 43549104017
- 2
- DOI 10.1109/LED.2008.919602
- W. Guan, S. Long, Q. Liu, M. Liu, and W. Wang, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 434 (2008). 10.1109/LED.2008.919602 (Pubitemid 351676302)
- (2008) IEEE Electron Device Letters , vol.29 , Issue.5 , pp. 434-437
- Guan, W.¹ Long, S.² Liu, Q.³ Liu, M.⁴ Wang, W.⁵

16
- 67650733296
- APPLAB 0003-6951,. 10.1063/1.3176977
- Q. Liu, C. Dou, Y. Wang, S. Long, W. Wang, M. Liu, M. Zhang, and J. Chen, Appl. Phys. Lett. APPLAB 0003-6951 95, 023501 (2009). 10.1063/1.3176977
- (2009) Appl. Phys. Lett. , vol.95 , pp. 023501
- Liu, Q.¹ Dou, C.² Wang, Y.³ Long, S.⁴ Wang, W.⁵ Liu, M.⁶ Zhang, M.⁷ Chen, J.⁸

17
- 48249096013
- APPLAB 0003-6951,. 10.1063/1.2958234
- S. I. Kim, J. H. Lee, Y. W. Chang, S. S. Hwang, and K. -H. Yoo, Appl. Phys. Lett. APPLAB 0003-6951 93, 033503 (2008). 10.1063/1.2958234
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033503
- Kim, S.I.¹ Lee, J.H.² Chang, Y.W.³ Hwang, S.S.⁴ Yoo, K.-H.⁵

18
- 34548435061
- Improvement of the optical properties of ZnO nanorods by Fe doping
- DOI 10.1016/j.physb.2007.05.030, PII S0921452607003997
- S. Baek, J. Song, and S. Lim, Physica B PHYBE3 0921-4526 399, 101 (2007). 10.1016/j.physb.2007.05.030 (Pubitemid 47361697)
- (2007) Physica B: Condensed Matter , vol.399 , Issue.2 , pp. 101-104
- Baek, S.¹ Song, J.² Lim, S.³

19
- 0002081496
- JAPIAU 0021-8979,. 10.1063/1.362349
- K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. JAPIAU 0021-8979 79, 7983 (1996). 10.1063/1.362349
- (1996) J. Appl. Phys. , vol.79 , pp. 7983
- Vanheusden, K.¹ Warren, W.L.² Seager, C.H.³ Tallant, D.R.⁴ Voigt, J.A.⁵ Gnade, B.E.⁶

20
- 0041305911
- Low-temperature wafer-scale production of ZnO nanowire arrays
- DOI 10.1002/anie.200351461
- L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. F. Zhang, R. J. Saykally, and P. D. Yang, Angew. Chem., Int. Ed. ACIEF5 1433-7851 42, 3031 (2003). 10.1002/anie.200351461 (Pubitemid 36897012)
- (2003) Angewandte Chemie - International Edition , vol.42 , Issue.26 , pp. 3031-3034
- Greene, L.E.¹ Law, M.² Goldberger, J.³ Kim, F.⁴ Johnson, J.C.⁵ Zhang, Y.⁶ Saykally, R.J.⁷ Yang, P.⁸

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