Local chemical state change in Co-O resistance random access memory

Physica Status Solidi - Rapid Research Letters

Volumn 2, Issue 3, 2008, Pages 99-101

  Shima, Hisashi ^a   Takano, Fumiyoshi ^a   Muramatsu, Hidenobu ^a   Yamazaki, Masashi ^a   Akinaga, Hiroyuki ^a   Kogure, Akinori ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Shimadzu Analytical and Measuring Center Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFM CANTILEVERS; CHEMICAL STATE CHANGES; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT CONDUCTION; ENERGY LEVEL; EXTERNAL VOLTAGES; FORMING PROCESS; KELVIN PROBE FORCE MICROSCOPY; LOW-RESISTANCE STATE; METAL ELECTRODES; NON-POLAR; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; STACKING STRUCTURES; TRANSITION-METAL OXIDES; TRILAYERS; XPS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; RANDOM ACCESS STORAGE; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 56349110380     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802003     Document Type: Article

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