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Volumn 13, Issue 6, 2010, Pages

Bipolar resistive switching characteristics of transparent indium gallium zinc oxide resistive random access memory

(7) Chen, Min Chen a Chang, Ting Chang a,b Huang, Sheng Yao a Chen, Shih Ching a Hu, Chih Wei c Tsai, Chih Tsung a Sze, Simon M c

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; DC VOLTAGE; ENDURANCE TEST; HIGH-RESISTANCE STATE; INDIUM GALLIUM ZINC OXIDES; INDIUM TIN OXIDE; OHM'S LAW; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; ROOM TEMPERATURE; SPACE-CHARGE-LIMITED CURRENT; VISIBLE REGION;

ELECTROFORMING; GALLIUM; INDIUM; SWITCHING SYSTEMS; TIN; TITANIUM COMPOUNDS; ZINC; ZINC OXIDE;

RANDOM ACCESS STORAGE;

EID: 77951151750 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3360181 Document Type: Article

Times cited : (112)

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