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Volumn 96, Issue 14, 2010, Pages

Opposite bias polarity dependence of resistive switching in n -type Ga-doped-ZnO and p-type NiO thin films

(7) Kinoshtia, Kentaro a Okutani, Takumi a Tanaka, Hayato a Hinoki, Toshio a,b Yazawa, Kenji b Ohmi, Koutoku a Kishida, Satoru a

a TOTTORI UNIVERSITY (Japan)

b Oike and Co Ltd (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS VOLTAGE; BIAS POLARITY; CONDUCTING ATOMIC FORCE MICROSCOPY; GA-DOPED; GA-DOPED ZNO; N-TYPE SEMICONDUCTORS; P TYPE SEMICONDUCTOR; P-TYPE NIO; RESISTANCE CHANGE; RESISTANCE CHANGE EFFECTS; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; ZNO;

ATOMIC FORCE MICROSCOPY; RANDOM ACCESS STORAGE; REDOX REACTIONS;

ZINC OXIDE;

EID: 77951154098 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3380822 Document Type: Article

Times cited : (58)

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