Properties of innovative resistive memories studied by X-ray and UV photoemission

Surface and Interface Analysis

Volumn 42, Issue 6-7, 2010, Pages 783-786

  Martinez, E ^a   Guedj, C ^a   Calka, P ^a   Minoret, S ^a   Buckley, J ^a   Bernard, Y ^a,b   Jousseaume, V ^a  

^a CEA GRENOBLE   (France)

^b Laboratoire Interdisciplinaire de Physique   (France)

Author keywords

NiO; Pt; Resistive random access memory; Ultraviolet photoelectron spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

BARRIER HEIGHTS; IN-SITU; NIO; OXIDATION STATE; OXYGEN CONTENT; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; UV PHOTOEMISSION; XPS;

ELECTRON AFFINITY; ELECTRONIC PROPERTIES; ELECTRONS; EMISSION SPECTROSCOPY; NICKEL OXIDE; OXYGEN; PHOTOEMISSION; PHOTOIONIZATION; PHOTONS; PLATINUM; RANDOM ACCESS STORAGE; SURFACE DEFECTS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77954283896     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3343     Document Type: Conference Paper

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