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Volumn 98, Issue 5, 2011, Pages

Dopant homogeneity and transport properties of impurity-doped oxide nanowires

(10) Klamchuen, Annop a Yanagida, Takeshi a,b Kanai, Masaki a Nagashima, Kazuki a Oka, Keisuke a Seki, Shu a Suzuki, Masaru c Hidaka, Yoshiki c Kai, Shoichi c Kawai, Tomoji a

a OSAKA UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT MEASUREMENT; DOPANT DISTRIBUTION; DOPANT INCORPORATION; DOPED OXIDES; HEAVILY DOPED; IMPURITY DOPING; SEMICONDUCTOR OXIDES; VAPOR-LIQUID-SOLID; VAPOR-SOLID GROWTH;

SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSPORT PROPERTIES; VAPORS;

NANOWIRES;

EID: 79951481539 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3549703 Document Type: Article

Times cited : (15)

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