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Volumn 7972, Issue , 2011, Pages

Critical challenges for EUV resist materials

Author keywords

Extreme ultraviolet; Lithography; Nanolithography; Photoresist

Indexed keywords

CHEMICALLY AMPLIFIED RESIST; CRITICAL CHALLENGES; EUV RESISTS; EXTREME ULTRAVIOLET; LINE EDGE ROUGHNESS; RESOLUTION REQUIREMENTS;

EID: 79955896836     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.882955     Document Type: Conference Paper
Times cited : (75)

References (23)
  • 1
    • 67149087397 scopus 로고    scopus 로고
    • The SEMATECH Berkeley microfield exposure tool: Learning at the 22-nm node and beyond
    • P. Naulleau, et al, "The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond," Proc. SPIE 7271, 7271W (2009).
    • (2009) Proc. SPIE , vol.7271
    • Naulleau, P.1
  • 2
    • 0037428835 scopus 로고    scopus 로고
    • A fourier-synthesis custom-coherence illuminator for EUV microfield lithography
    • P. Naulleau, K. Goldberg, P. Batson, J. Bokor, P. Denham, and S. Rekawa, "A Fourier-synthesis custom-coherence illuminator for EUV microfield lithography," Appl. Opt. 42, 820-826 (2003).
    • (2003) Appl. Opt. , vol.42 , pp. 820-826
    • Naulleau, P.1    Goldberg, K.2    Batson, P.3    Bokor, J.4    Denham, P.5    Rekawa, S.6
  • 3
    • 0041592534 scopus 로고    scopus 로고
    • The line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization
    • P. Naulleau and G. Gallatin, "The line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization," Appl. Opt. 42, 3390-3397 (2003).
    • (2003) Appl. Opt. , vol.42 , pp. 3390-3397
    • Naulleau, P.1    Gallatin, G.2
  • 4
    • 0032654746 scopus 로고    scopus 로고
    • Effects of mask roughness and condenser scattering in EUVL systems
    • N. Beaudry, T. Milster, "Effects of mask roughness and condenser scattering in EUVL systems," Proc. SPIE. 3676, 653-662 (1999).
    • (1999) Proc. SPIE , vol.3676 , pp. 653-662
    • Beaudry, N.1    Milster, T.2
  • 5
    • 3142692472 scopus 로고    scopus 로고
    • The relevance of mask-roughness-induced printed line-edge roughness in recent and future EUV lithography tests
    • P. Naulleau, "The relevance of mask-roughness-induced printed line-edge roughness in recent and future EUV lithography tests," Appl. Opt. 43, 4025-4032 (2004).
    • (2004) Appl. Opt. , vol.43 , pp. 4025-4032
    • Naulleau, P.1
  • 6
    • 49749106687 scopus 로고    scopus 로고
    • System-level line-edge roughness limits in extreme ultraviolet lithography
    • P. Naulleau, D. Niakoula, G. Zhang, "System-level line-edge roughness limits in extreme ultraviolet lithography," J. Vac. Sci. & Technol. B 26, 1289-1293 (2008).
    • (2008) J. Vac. Sci. & Technol. B , vol.26 , pp. 1289-1293
    • Naulleau, P.1    Niakoula, D.2    Zhang, G.3
  • 10
    • 79955128612 scopus 로고    scopus 로고
    • The effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer
    • to be published
    • P. Naulleau and G. Gallatin, "The effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer," J. Vac. Sci. Technol. B, to be published (2011).
    • (2011) J. Vac. Sci. Technol. B
    • Naulleau, P.1    Gallatin, G.2
  • 11
    • 77953530681 scopus 로고    scopus 로고
    • Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model
    • S. Robertson, J. Biafore, M. Smith, M. Reilly, J. Wandell, "Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model," Proc. SPIE 7639, 763934 (2010).
    • (2010) Proc. SPIE , vol.7639 , pp. 763934
    • Robertson, S.1    Biafore, J.2    Smith, M.3    Reilly, M.4    Wandell, J.5
  • 12
    • 77953505796 scopus 로고    scopus 로고
    • Stochastic approach to modeling photoresist development
    • C. A. Mack, "Stochastic approach to modeling photoresist development", J. Vac. Sci. Technol. B 27, 1122-1128 (2009).
    • (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1122-1128
    • Mack, C.A.1
  • 14
    • 0040707393 scopus 로고    scopus 로고
    • Measuring acid generation efficiency in chemically amplified resists with all three beams
    • C. Szamanda, et. al., "Measuring acid generation efficiency in chemically amplified resists with all three beams," J. Vac. Sci. Technol. B 17, 3356-3361 (1999);
    • (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 3356-3361
    • Szamanda, C.1
  • 18
    • 77953451247 scopus 로고    scopus 로고
    • Characterization of line-edge roughness (LER) propagation from resist: Underlayer interfaces in ultra-thin resist films
    • Simi A. George, Patrick P. Naulleau, Benjamin Z. Y. Wu, Joseph T. Kennedy, Song-Yuan Xie, Kyle Y. Flanigan, Thomas I. Wallow, " Characterization of line-edge roughness (LER) propagation from resist: underlayer interfaces in ultra-thin resist films," Proc. SPIE 7636, 763605-1 (2010).
    • (2010) Proc. SPIE , vol.7636 , pp. 763605-1
    • George, S.A.1    Naulleau, P.P.2    Wu Benjamin, Z.Y.3    Kennedy, J.T.4    Xie, S.-Y.5    Flanigan, K.Y.6    Wallow, T.I.7
  • 19
    • 79955913310 scopus 로고    scopus 로고
    • Out of band radiation effects on resist patterning
    • these proceedings
    • S. George, P. Naulleau, "Out of band radiation effects on resist patterning," Proc. SPIE 7969, these proceedings (2011).
    • (2011) Proc. SPIE , vol.7969
    • George, S.1    Naulleau, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.