-
1
-
-
67149087397
-
The SEMATECH Berkeley microfield exposure tool: Learning at the 22-nm node and beyond
-
P. Naulleau, et al, "The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond," Proc. SPIE 7271, 7271W (2009).
-
(2009)
Proc. SPIE
, vol.7271
-
-
Naulleau, P.1
-
2
-
-
0037428835
-
A fourier-synthesis custom-coherence illuminator for EUV microfield lithography
-
P. Naulleau, K. Goldberg, P. Batson, J. Bokor, P. Denham, and S. Rekawa, "A Fourier-synthesis custom-coherence illuminator for EUV microfield lithography," Appl. Opt. 42, 820-826 (2003).
-
(2003)
Appl. Opt.
, vol.42
, pp. 820-826
-
-
Naulleau, P.1
Goldberg, K.2
Batson, P.3
Bokor, J.4
Denham, P.5
Rekawa, S.6
-
3
-
-
0041592534
-
The line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization
-
P. Naulleau and G. Gallatin, "The line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization," Appl. Opt. 42, 3390-3397 (2003).
-
(2003)
Appl. Opt.
, vol.42
, pp. 3390-3397
-
-
Naulleau, P.1
Gallatin, G.2
-
4
-
-
0032654746
-
Effects of mask roughness and condenser scattering in EUVL systems
-
N. Beaudry, T. Milster, "Effects of mask roughness and condenser scattering in EUVL systems," Proc. SPIE. 3676, 653-662 (1999).
-
(1999)
Proc. SPIE
, vol.3676
, pp. 653-662
-
-
Beaudry, N.1
Milster, T.2
-
5
-
-
3142692472
-
The relevance of mask-roughness-induced printed line-edge roughness in recent and future EUV lithography tests
-
P. Naulleau, "The relevance of mask-roughness-induced printed line-edge roughness in recent and future EUV lithography tests," Appl. Opt. 43, 4025-4032 (2004).
-
(2004)
Appl. Opt.
, vol.43
, pp. 4025-4032
-
-
Naulleau, P.1
-
6
-
-
49749106687
-
System-level line-edge roughness limits in extreme ultraviolet lithography
-
P. Naulleau, D. Niakoula, G. Zhang, "System-level line-edge roughness limits in extreme ultraviolet lithography," J. Vac. Sci. & Technol. B 26, 1289-1293 (2008).
-
(2008)
J. Vac. Sci. & Technol. B
, vol.26
, pp. 1289-1293
-
-
Naulleau, P.1
Niakoula, D.2
Zhang, G.3
-
7
-
-
79959345348
-
Evaluation of EUV resist materials for use at the 32 nm half-pitch node
-
T. Wallow, C. Higgins, R. Brainard, K. Petrillo, W. Montgomery, C. Koay, G. Denbeaux, O. Wood, Y. Wei, "Evaluation of EUV resist materials for use at the 32 nm half-pitch node," Proc. SPIE 6921, 69211F (2008).
-
(2008)
Proc. SPIE
, vol.6921
-
-
Wallow, T.1
Higgins, C.2
Brainard, R.3
Petrillo, K.4
Montgomery, W.5
Koay, C.6
Denbeaux, G.7
Wood, O.8
Wei, Y.9
-
8
-
-
79955900822
-
The SEMATECH Berkeley MET: Learning at the 22-nm node
-
Lake Tahoe, CA, September 28- October 1 proceedings available from SEMATECH, Austin, TX
-
P. Naulleau, C. Anderson, J. Chiu, P. Denham, S. George, K. Goldberg, B. Hoef, G. Jones, C. Koh, B. La Fontaine, A. Ma, W. Montgomery, J. Park, T. Wallow, S. Wurm, "The SEMATECH Berkeley MET: learning at the 22-nm node," 2008 International Symposium on Extreme Ultraviolet Lithography, Lake Tahoe, CA, September 28- October 1, 2008, proceedings available from SEMATECH, Austin, TX.
-
(2008)
2008 International Symposium on Extreme Ultraviolet Lithography
-
-
Naulleau, P.1
Anderson, C.2
Chiu, J.3
Denham, P.4
George, S.5
Goldberg, K.6
Hoef, B.7
Jones, G.8
Koh, C.9
La Fontaine, B.10
Ma, A.11
Montgomery, W.12
Park, J.13
Wallow, T.14
Wurm, S.15
-
10
-
-
79955128612
-
The effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer
-
to be published
-
P. Naulleau and G. Gallatin, "The effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer," J. Vac. Sci. Technol. B, to be published (2011).
-
(2011)
J. Vac. Sci. Technol. B
-
-
Naulleau, P.1
Gallatin, G.2
-
11
-
-
77953530681
-
Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model
-
S. Robertson, J. Biafore, M. Smith, M. Reilly, J. Wandell, "Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model," Proc. SPIE 7639, 763934 (2010).
-
(2010)
Proc. SPIE
, vol.7639
, pp. 763934
-
-
Robertson, S.1
Biafore, J.2
Smith, M.3
Reilly, M.4
Wandell, J.5
-
12
-
-
77953505796
-
Stochastic approach to modeling photoresist development
-
C. A. Mack, "Stochastic approach to modeling photoresist development", J. Vac. Sci. Technol. B 27, 1122-1128 (2009).
-
(2009)
J. Vac. Sci. Technol. B
, vol.27
, pp. 1122-1128
-
-
Mack, C.A.1
-
13
-
-
3843087239
-
Shot noise, LER, and quantum efficiency of EUV photoresists
-
R. Brainard, P. Trefonas, J. Lammers, C. Cutler, J. Mackevich, A. Trefonas, S. Robertson, "Shot noise, LER, and quantum efficiency of EUV photoresists," Proc. SPIE 5374, 74-85 (2004)
-
(2004)
Proc. SPIE
, vol.5374
, pp. 74-85
-
-
Brainard, R.1
Trefonas, P.2
Lammers, J.3
Cutler, C.4
Mackevich, J.5
Trefonas, A.6
Robertson, S.7
-
14
-
-
0040707393
-
Measuring acid generation efficiency in chemically amplified resists with all three beams
-
C. Szamanda, et. al., "Measuring acid generation efficiency in chemically amplified resists with all three beams," J. Vac. Sci. Technol. B 17, 3356-3361 (1999);
-
(1999)
J. Vac. Sci. Technol. B
, vol.17
, pp. 3356-3361
-
-
Szamanda, C.1
-
15
-
-
33748534117
-
Line edge roughness and intrinsic bias for two methacrylate polymer resist systems
-
Adam R. Pawlowkski, A. Acheta, H. Levinson, T. Michaelson, A. Jamieson, Y. Nishimura, C. Willson, "Line edge roughness and intrinsic bias for two methacrylate polymer resist systems", J. Microlith. Microfab. Microsys. 5, 023001 (2006).
-
(2006)
J. Microlith. Microfab. Microsys.
, vol.5
, pp. 023001
-
-
Pawlowkski, A.R.1
Acheta, A.2
Levinson, H.3
Michaelson, T.4
Jamieson, A.5
Nishimura, Y.6
Willson, C.7
-
16
-
-
65849522023
-
RLS tradeoff vs. quantum yield of high PAG EUV resists
-
C. Higgins, A. Antohe, G. Denbeaux, S. Kruger, R. Brainard, Jacque Georger, "RLS tradeoff vs. quantum yield of high PAG EUV resists." Proc. SPIE 7271, 727147 (2009).
-
(2009)
Proc. SPIE
, vol.7271
, pp. 727147
-
-
Higgins, C.1
Antohe, A.2
Denbeaux, G.3
Kruger, S.4
Brainard, R.5
Georger, J.6
-
17
-
-
70249091481
-
Kinetics, chemical modeling and lithography of novel acid amplifiers for use in EUV photoresists
-
R. Brainard, S. Kruger, C. Higgins, S. Revuru, S. Gibbons, D. Freedman, W. Yueh, T. Younkin, "Kinetics, Chemical Modeling and Lithography of Novel Acid Amplifiers for Use in EUV Photoresists," J. Photopolym. Sci. Technol. 22, 43-50 (2009).
-
(2009)
J. Photopolym. Sci. Technol.
, vol.22
, pp. 43-50
-
-
Brainard, R.1
Kruger, S.2
Higgins, C.3
Revuru, S.4
Gibbons, S.5
Freedman, D.6
Yueh, W.7
Younkin, T.8
-
18
-
-
77953451247
-
Characterization of line-edge roughness (LER) propagation from resist: Underlayer interfaces in ultra-thin resist films
-
Simi A. George, Patrick P. Naulleau, Benjamin Z. Y. Wu, Joseph T. Kennedy, Song-Yuan Xie, Kyle Y. Flanigan, Thomas I. Wallow, " Characterization of line-edge roughness (LER) propagation from resist: underlayer interfaces in ultra-thin resist films," Proc. SPIE 7636, 763605-1 (2010).
-
(2010)
Proc. SPIE
, vol.7636
, pp. 763605-1
-
-
George, S.A.1
Naulleau, P.P.2
Wu Benjamin, Z.Y.3
Kennedy, J.T.4
Xie, S.-Y.5
Flanigan, K.Y.6
Wallow, T.I.7
-
19
-
-
79955913310
-
Out of band radiation effects on resist patterning
-
these proceedings
-
S. George, P. Naulleau, "Out of band radiation effects on resist patterning," Proc. SPIE 7969, these proceedings (2011).
-
(2011)
Proc. SPIE
, vol.7969
-
-
George, S.1
Naulleau, P.2
-
20
-
-
79955908209
-
The SEMATECH Berkeley MET: Extending EUV learning down to 16-nm half pitch
-
these proceedings
-
C. Anderson, P. Naulleau, L. Baclea-an, P. Denham, S. George, K. Goldberg, G. Jones, B. McClinton, W. Montgomery, N. Smith, T. Wallow, "The SEMATECH Berkeley MET: extending EUV learning down to 16-nm half pitch," Proc. SPIE 7969, these proceedings (2011).
-
(2011)
Proc. SPIE
, vol.7969
-
-
Anderson, C.1
Naulleau, P.2
Baclea-An, L.3
Denham, P.4
George, S.5
Goldberg, K.6
Jones, G.7
McClinton, B.8
Montgomery, W.9
Smith, N.10
Wallow, T.11
-
21
-
-
77953449273
-
The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch
-
P. Naulleau, C. Anderson, L. Baclea-an, S. George, K. Goldberg, B. Hoef, M. Jones, C. Koh, B. La Fontaine, W. Montgomery, T. Wallow, "The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch," Proc. SPIE 7636, 76361J-1 (2010).
-
(2010)
Proc. SPIE
, vol.7636
-
-
Naulleau, P.1
Anderson, C.2
Baclea-An, L.3
George, S.4
Goldberg, K.5
Hoef, B.6
Jones, M.7
Koh, C.8
La Fontaine, B.9
Montgomery, W.10
Wallow, T.11
-
23
-
-
79955911205
-
Directly patterned inorganic hardmask for EUV lithography
-
these proceedings
-
J. Stowers, A. Telecky, D. Keszler, A. Grenville, P. Naulleau, C. Anderson, "Directly patterned inorganic hardmask for EUV lithography," Proc. SPIE 7969, these proceedings (2011).
-
(2011)
Proc. SPIE
, vol.7969
-
-
Stowers, J.1
Telecky, A.2
Keszler, D.3
Grenville, A.4
Naulleau, P.5
Anderson, C.6
|