The SEMATECH Berkeley MET pushing EUV development beyond 22nm half pitch

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Naulleau, Patrick ^a   Anderson, Christopher N ^a   Baclea An, Lorie Mae ^a   Chan, David ^c   Denham, Paul ^a   George, Simi ^a   Goldberg, Kenneth A ^a   Hoef, Brian ^a   Jones, Gideon ^a   Koh, Chawon ^c   La Fontaine, Bruno ^d   McClinton, Brittany ^b   Miyakawa, Ryan ^b   Montgomery, Warren ^c   Rekawa, Seno ^a   Wallow, Tom ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c SEMATECH   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

extreme ultraviolet; lithography; mask cleaning; mask roughness; nanolithography; photoresist

Indexed keywords

CONTACT PRINTING; EUV MASK; EUV RESISTS; EXPOSURE TOOL; EXTREME ULTRAVIOLET LITHOGRAPHY MASKS; EXTREME ULTRAVIOLETS; HARDMASKS; LINE EDGE ROUGHNESS; MASK CLEANING; MASK-ROUGHNESS; NUMERICAL APERTURE; RESOLUTION ENHANCEMENT TECHNIQUE; SEMATECH; SUBSTRATE ROUGHNESS;

CLEANING; MASKS; NANOLITHOGRAPHY; PRINTING;

ROUGHNESS MEASUREMENT;

EID: 77953449273     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.848438     Document Type: Conference Paper

References (14)

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