Directly patterned inorganic hardmask for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7969, Issue , 2011, Pages

  Stowers, Jason K ^a   Telecky, Alan ^a   Kocsis, Michael ^a   Clark, Benjamin L ^a   Keszler, Douglas A ^a   Grenville, Andrew ^a   Anderson, Chris N ^b   Naulleau, Patrick P ^b  

^a Inpria Corporation   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

EUV resist; EUVL; Extreme Ultraviolet Lithography; inorganic negative tone resist; patternable hardmask

Indexed keywords

COATING UNIFORMITY; ELECTRON-BEAM EXPOSURE; EUV LITHOGRAPHY; EUV RESISTS; EUVL; HARDMASKS; INORGANIC NEGATIVE TONE RESIST; METAL OXIDES; NEW MATERIAL; PATTERN COLLAPSE; PATTERN TRANSFERS; SEMATECH;

ASPECT RATIO; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; METALLIC COMPOUNDS;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 79955911205     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879542     Document Type: Conference Paper

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