The SEMATECH Berkeley microfield exposure tool: Learning at the 22-nm node and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7271, Issue , 2009, Pages

  Naulleau, Patrick P ^a   Anderson, Christopher N ^b   Baclea an, Lorie Mae ^a   Denham, Paul ^a   George, Simi ^a   Goldberg, Kenneth A ^a   Goldstein, Michael ^c   Hoef, Brian ^a   Hudyma, Russ ^d   Jones, Gideon ^a   Koh, Chawon ^c   La Fontaine, Bruno ^e   McClinton, Brittany ^a   Miyakawa, Ryan ^a   Montgomery, Warren ^c   Roller, John ^a   Wallow, Tom ^e   Wurm, Stefan ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c SEMATECH   (United States)

^d Hyperion   (United States)

^e ADVANCED MICRO DEVICES   (United States)

Author keywords

Aberrations; Extreme ultraviolet; Lithography; Photoresist

Indexed keywords

32-NM NODE; CONTACT HOLES; CRITICAL ISSUES; EUV RESISTS; EXPOSURE TOOL; EXTREME ULTRAVIOLET; EXTREME ULTRAVIOLETS; HALF-PITCH IMAGING; ILLUMINATION SETTINGS; LINE EDGE ROUGHNESS; NUMERICAL APERTURE; PRODUCTION TOOLS; RESIST DEVELOPMENT; RESIST RESOLUTION; SEMATECH; SYSTEM LEVELS;

ABERRATIONS; EDUCATION; EXPOSURE METERS; LASER PULSES; NANOTECHNOLOGY; PHOTORESISTORS; SURFACE TREATMENT;

ULTRAVIOLET DEVICES;

EID: 67149087397     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814232     Document Type: Conference Paper

References (17)

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