Relevance of mask-roughness-induced printed line-edge roughness in recent and future extreme-ultraviolet lithography tests

Applied Optics

Volumn 43, Issue 20, 2004, Pages 4025-4032

  Naulleau, Patrick P ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE ANALYSIS; LITHOGRAPHY; MULTILAYERS; PROBLEM SOLVING; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

ILLUMINATION COHERENCE; LINE-EDGE ROUGHNESS; MASK COUPLING; MASK ROUGHNESS;

MASKS;

EID: 3142692472     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.43.004025     Document Type: Article

References (33)

1. R. Stulen and D. Sweeney, "Extreme ultraviolet lithography," IEEE J. Quantum Electron. 35, 694-699 (1999).
2. H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, and N. Harned, "EXSTATIC: ASML's α-tool development for EUVL," in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE 4688, 52-63 (2002).
3. K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, and H. Kinoshita, "Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT," in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE 4688, 664-671 (2002).
4. International Technology Roadmap for Semiconductors, 2001 ed., http://public.itrs.net/.
5. R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Technol. B 17, 3384-3389 (1999).
6. M. Shumway, S. Lee, C. Cho, P. Naulleau, K. Goldberg, and J. Bokor, "Extremely fine-pitch printing with a 10× Schwarzschild optic at extreme ultraviolet wavelengths," in Emerging Lithographic Technologies V, E. A. Dobisz, ed., Proc. SPIE 4343, 357-362 (2001).
7. W. Li, H. Solak, and F. Cerrina, "EUV nanolithography: sub-50 nm L/S," in Emerging Lithographic Technologies IV, E. A. Dobisz, ed., Proc. SPIE 3997, 794-798 (2000).
8. T. Watanabe, H. Kinoshita, A. Miyafuji, S. Irie, S. Shirayone, S. Mori, E. Yano, H. Hada, K. Ohmori, and H. Komano, "Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography," in Emerging Lithographic Technologies IV, E. A. Dobisz, ed., Proc. SPIE 3997, 600-607 (2000).
9. J. Goldsmith, K. Berger, D. Bozman, G. Cardinale, D. Folk, C. Henderson, D. O'Connell, A. Ray-Chaudhuri, K. Stewart, D. Tichenor, H. Chapman, R. Gaughan, R. Hudyma, C. Montcalm, E. Spiller, J. Taylor, J. Williams, K. Goldberg, E. Gullikson, P. Naulleau, and J. Cobb, "Sub-100-nm lithographic imaging with the EUV 10× Microstepper," in Emerging Lithographic Technologies III, Y. Vladimirsky, ed., Proc. SPIE 3676, 264-271 (1999).
10. P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O'Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, and G. Zhang, "Sub-70-nm EUV lithography at the Advanced Light Source Static Microfield Exposure Station using the ETS Set-2 Optic," J. Vac. Sci. Technol. B 20, 2829-2833 (2002).
11. P. Naulleau and G. Gallatin, "The line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization," Appl. Opt. 42, 3390-3397 (2003).
12. N. Beaudry and T. Milster, "Effects of object roughness on partially coherent image formation," Opt. Lett. 25, 454-456 (2000).
13. N. Beaudry and T. Milster, "Effects of mask roughness and condenser scattering in EUVL systems," in Emerging Lithographic Technologies III, Y. Vladimirsky, ed., Proc. SPIE 3676, 653-662 (1999).
14. J. W. Goodman, Statistical Optics (Wiley, New York, 1985), Chap. 7, pp. 286-360.
15. PROLITH is a registered trademark of KLA-Tencor Corporation, 160 Rio Robles, San Jose, Calif. 95134.
16. SOLID-C is a registered trademark of SIGMA-C GmbH, Thomas-Dehler-Str. 9, 81737 München, Germany.
17. J. H. Underwood and T. W. Barbee, Jr., "Layered synthetic microstructures as Bragg diffractors for X rays and extreme ultraviolet: theory and predicted performance," Appl. Opt. 20, 3027-3034 (1981).
18. D. Stearns, "Stochastic model for thin film growth and erosion," Appl. Phys. Lett. 62, 1745-1747 (1993).
19. D. Stearns and E. Gullikson, "Nonspecular scattering from extreme ultraviolet multilayer coatings," Physica B 283, 84-91 (2000).
20. Z. Zhengrong, K. Lucas, J. Cobb, S. Hector, and A. Strojwas, "Rigorous EUV mask simulator using 2D and 3D waveguide methods," in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE 5037, 494-503 (2003).
21. A. Erdmann, C. Kalus, T. Schmoller, and A. Wolter, "Efficient Simulation of light diffraction from three-dimensional EUV masks using field decomposition techniques," in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE 5037, 482-493 (2003).
22. T. Pistor, T. Y. Deng, and A. Neureuther, "Extreme ultraviolet mask defect simulation: Low-profile defects," J. Vac. Sci. Technol. B 18, 2926-2929 (2000).
23. E. Gullikson, C. Cerjan, D. Stearns, P. Mirkarimi, and D. Sweeney, "Practical approach for modeling extreme ultraviolet lithography mask defects," J. Vac. Sci. Technol. B 20, 81-86 (2002).
24. K. Goldberg, P. Naulleau, J. Bokor, and H. Chapman, "Testing EUV optics with visible-light and EUV interferometry," J. Vac. Sci. Technol. B 20, 2834-2839 (2002).
25. D. Tichenor, W. Replogle, S. Lee, W. Ballard, G. Kubiak, L. Klebanoff, J. Goldsmith, J. Wronosky, L. Hale, H. Chapman, J. Taylor, K. Goldberg, and P. Naulleau, "Performance upgrades in the EUV engineering test stand," in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE 4688, 72-86 (2002).
26. D. O'Connell, S. Lee, D. Tichenor, W. Ballard, L. Bernardez, J. Goldsmith, S. Haney, K. Jefferson, T. Johnson, A. Leung, W. Replogle, J. Bjorkholm, E. Panning, P. Naulleau, H. Chapman, S. Wurm, G. Kubiak, and C. Gwyn, "Lithographic characterization of improved projection optics in the EUVL engineering test stand," in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE 5037, 83-94 (2003).
27. D. W. Sweeney, R. Hudyma, H. N. Chapman, and D. Shafer, "EUV optical design for a 100-nm CD imaging system," in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE 3331, 2-10 (1998).
28. P. Naulleau, K. Goldberg, E. Anderson, J. Bokor, B. Harteneck, K. Jackson, D. Olynick, F. Salmassi, S. Baker, P. Mirkarimi, E. Spiller, C. Walton, D. O'Connell, P. Yan, and G. Zhang, "Printing-based performance analysis of the ETS Set-2 optic using a synchrotron exposure station with variable sigma," J. Vac. Sci. Technol. B 21, 2697-2700 (2003).
29. J. Taylor, D. Sweeney, R. Hudyma, L. Hale, T. Decker, G. Kubiak, W. Sweatt, and N. Wester, "EUV Microexposure Tool (MET) for near-term development using a high NA projection system," Proceedings of the 2nd International EUVL Workshop (International Sematech, Austin, Tex., 2000).
30. R. Hudyma, J. Taylor, D. Sweeney, L. Hale, W. Sweatt, and N. Wester, "E-D characteristics and aberration sensitivity of the Microexposure Tool (MET)," Proceedings of the 2nd International EUVL Workshop (International Sematech, Austin, Tex., 2000).
31. S. Hector, "EUVL masks: requirements and potential solutions," in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE 4688, 134-149 (2002).
32. P. Mirkarimi, E. Spiller, D. Stearns, V. Sperry, and S. Baker, "An ion-assisted Mo-Si deposition process for planarizing reticle substrates for extreme ultraviolet lithography," IEEE J. Quantum Electron. 37, 1514-1516 (2001).
33. T. Ogawa, M. Ito, H. Yamanashi, H. Hoko, E. Hoshino, and S. Okazaki, "Simulation studies of roughness-smoothing effect of molybdenum/silicon multilayer coating based on resputtering model," in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE 4688, 716-724 (2002).