The SEMATECH Berkeley MET: Extending EUV learning to 16-nm half pitch

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7969, Issue , 2011, Pages

  Anderson, Christopher N ^a   Baclea An, Lorie Mae ^a   Denham, Paul E ^a   George, Simi A ^a   Goldberg, Kenneth A ^a   Jones, Michael S ^a   Smith, Nathan S ^a   Wallow, Thomas I ^b   Montgomery, Warren ^c   Naulleau, Patrick P ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b IBM MICROELECTRONICS   (United States)

^c SEMATECH   (United States)

Author keywords

16 nm; 22 nm; Berkeley; EUV; Frequency Doubling; Lithography; MET; Phase Shift Mask; Resist; SEMATECH

Indexed keywords

16 NM; 22 NM; BERKELEY; EUV; FREQUENCY DOUBLING; MET; PHASE-SHIFT-MASK; RESIST; SEMATECH;

EXPOSURE METERS; METALLIC COMPOUNDS; PHASE SHIFT;

LITHOGRAPHY;

EID: 79955908209     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.881573     Document Type: Conference Paper

References (6)

1. P. Naulleau. Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic. Proc. of SPIE, 5374:881-891, 2004.
2. H. Oizumi, Y. Tanaka, I. Nishiyama, H. Kondo, and K. Murakami. Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA). Proc. of SPIE, 5751:102-109, 2005. (Pubitemid 41275378)
3. A. Brunton et. al. High-resolution EUV imaging tools for resist exposure and aerial image monitoring. Proc. of SPIE, 5751:78-79, 2005.
4. P. Naulleau, K. A. Goldberg, P. Batson, J. Bokor, P. Denham, and S. Rekawa. Fourier-synthesis custom-coherence illuminator for extreme ultraviolet microfield lithography. Applied Optics, 43(5):820-825, 2003.
5. P. Naulleau et. al. The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond. Proc. of SPIE, 7271(7271W), 2009.
6. P. Naulleau et. al. The SEMATECH Berkeley MET pushing EUV develoment beyond 22-nm half pitch. Proc. of SPIE, 7636(76361J-1), 2010.