Nanotechnology enables a new memory growth model

Proceedings of the IEEE

Volumn 91, Issue 11, 2003, Pages 1765-1771

  Hwang, Chang Gyu ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

90 nm memory; Future dynamic RAM (DRAM); Future memory; Memory paradigm; Multilevel cell (MLC) Flash; NAND Flash; Nanotechnology memory; New memory growth model

Indexed keywords

CONSUMER ELECTRONICS; INFORMATION TECHNOLOGY; MATHEMATICAL MODELS; MOBILE TELECOMMUNICATION SYSTEMS; PERSONAL COMPUTERS; RANDOM ACCESS STORAGE; VIDEO ON DEMAND;

90-MM MEMORY; FUTURE DYNAMIC RAM (DRAM); FUTURE MEMORY; MEMORY PARADIGM; MULTILEVEL CELL (MLC) FLASH; NAND FLASH; NANOTECHNOLOGY MEMORY; NEW MEMORY GROWTH MODELS;

NANOTECHNOLOGY;

EID: 9244246679     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2003.818323     Document Type: Conference Paper

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