Data retention characteristics of nitride-based charge trap memory devices with high-k dielectrics and high-work-function metal gates for multi-gigabit flash memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3213-3216

  Lee, Jang Sik ^a,b   Kang, Chang Seok ^a   Shin, Yoo Cheol ^a   Lee, Chang Hyun ^a   Park, Ki Tae ^a   Sel, Jong Sun ^a   Kim, Viena ^a   Choe, Byeong In ^a   Sim, Jae Sung ^a   Choi, Jungdal ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

^b Kookmin University   (South Korea)

Author keywords

Charge trap layer; Flash memory; High k dielectrics; High work function metal gate; SONOS MONOS

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FLASH MEMORY; GATES (TRANSISTOR); PERMITTIVITY;

CHARGE TRAP LAYERS; HIGH-K DIELECTRICS; HIGH-WORK-FUNCTION METAL GATE; SONOS/MONOS;

DATA STORAGE EQUIPMENT;

EID: 33646920085     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3213     Document Type: Article

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