Simultaneous sudden changes of electrical behavior at the threshold in laser diodes

Journal of Applied Physics

Volumn 102, Issue 6, 2007, Pages

  Feng, L F ^a   Li, D ^a   Zhu, C Y ^a   Wang, C D ^a   Cong, H X ^b   Xie, X S ^c   Lu, C Z ^c  

^a TIANJIN UNIVERSITY   (China)

^b NANKAI UNIVERSITY   (China)

^c BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; HETEROJUNCTIONS; THRESHOLD VOLTAGE;

DOUBLE HETEROSTRUCTURE (DH); ELECTRICAL BEHAVIOR; JUNCTION VOLTAGE; MULTI-QUANTUM-WELL (MQW) LASER DIODES; SERIES RESISTANCE;

QUANTUM WELL LASERS;

EID: 34848885146     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2779278     Document Type: Article

References (29)

1. M. Lyakas, R. Zaharia, and M. Eizenberg, J. Appl. Phys. 78, 5481 (1995).
2. A. Kaminski, J. J. Marchand, and A. Laugier, Solid-State Electron. 43, 741 (1999).
3. J. H. Werner, Appl. Phys. A: Solids Surf. 47, 291 (1988).
4. V. Mikhelashvili, G. Eisenstein, and R. Uzdin, Solid-State Electron. 45, 143 (2001).
5. T. L. Paoli and P. A. Barnes, Appl. Phys. Lett. 28, 714 (1976).
6. P. A. Barnes and T. L. Paoli, IEEE J. Quantum Electron. QE-12, 633 (1976).
7. W. B. Joyce and R. W. Dixon, J. Appl. Phys. 47, 3510 (1976).
8. P. G. Eliseev, A. I. Krasil'nkov, M. A. Man'ko, and V. P. Strakhov, in Physics of p-n Junctions and Semiconductor Devices, edited by, S. M. Ryvkin, and, Yu. V. Shmartsev, (Plenum, New York, 1971), p. 150.
9. T. L. Paoli, IEEE J. Quantum Electron. QE-14, 62 (1978).
10. W. B. Joyce and R. W. Dixon, J. Appl. Phys. 49, 3719 (1978).
11. P. L. Anthony and N. E. Schumaker, IEEE Electron Device Lett. EDL-1, 58 (1980).
12. P. G. Eliseev, O. G. Okhotnikov, and G. T. Pak, Sov. J. Quantum Electron. 10, 966 (1980).
13. J. E. Dmochowski and L. J. Dobaczewski, J. Appl. Phys. 51, 4622 (1980).
14. P. D. Wright, W. B. Joyce, and D. C. Craft, J. Appl. Phys. 53, 1364 (1982).
15. M. M. Choy and C. E. Barnes, Electron. Lett. 21, 846 (1985).
16. J. W. Shi, E. S. Jin, and D. S. Gao, Opt. Quantum Electron. 24, 775 (1992).
17. J. W. Shi, E. S. Jin, J. Ma, and D. S. Gao, Microelectron. Reliab. 34, 1405 (1994).
18. P. G. Eliseev, J. Maege, G. Erbert, and G. Beister, Quantum Electron. 25, 99 (1995).
19. J. W. Shi, E. S. Jin, H. Y. Li, J. Ma, L. Y. Qi, and D. S. Gao, Opt. Quantum Electron. 28, 647 (1996).
20. H. Y. Li, L. Y. Qi, J. W. Shi, E. S. Jin, Z. T. Li, D. S. Gao, and J. Z. Yu, Microelectron. Reliab. 40, 333 (2000).
21. L. Y. Qi, J. W. Shi, H. Y. Li, E. S. Jin, and D. S. Gao, Microelectron. Reliab. 40, 2123 (2000).
22. Y. Deshayes, L. Bechou, L. Mendizabal, and Y. Danto, Measurement 34, 157 (2003).
23. P. G. Eliseev, P. Adamiec, A. Bercha, F. Dybaa, R. Bohdan, and W. A. Trzeciakowski, IEEE J. Quantum Electron. QE-41, 9 (2005).
24. C. D. Wang, C. Y. Zhu, G. Y. Zhang, J. Shen, and L. Li, IEEE Trans. Electron Devices ED-50, 1145 (2003).
25. C. Y. Zhu, C. D. Wang, L. F. Feng, G. Y. Zhang, L. S. Yu, and J. Shen, Solid-State Electron. 50, 821 (2006).
26. L. F. Feng, C. D. Wang, H. X. Cong, C. Y. Zhu, J. Wang, X. S. Xie, C. Z. Lu, and G. Y. Zhang, IEEE J. Quantum Electron. QE-43, 458 (2007).
27. J. Wang, L. F. Feng, C. Y. Zhu, H. X. Cong, Y. Chen, and C. D. Wang, Optoelectronis Letters 1, 124 (2005).
28. H. Haken, Synergetics, 3rd ed. (Springer-Verlag, Berlin, 1983).
29. P. W. Anderson, Basic Notions of Condensed Matter Physics (Benjamin, Menlo Park, CA, 1984).