Low-frequency negative capacitance in La0.8 Sr0.2 Mn O3 Nb -doped SrTi O3 heterojunction

Applied Physics Letters

Volumn 92, Issue 5, 2008, Pages

  Wang, C C ^a   Liu, G Z ^a   He, M ^a   Lu, H B ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC FIELD EFFECTS; LANTHANUM COMPOUNDS; RELAXATION PROCESSES;

COMBINATIONAL CONTRIBUTIONS; MAXWELL-WAGNER INTERFACIAL RELAXATION;

HETEROJUNCTIONS;

EID: 38949122642     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2840195     Document Type: Article

References (23)

1. I. Žutić, J. Fabian, and S. D. Sarma, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.76.323 76, 323 (2004).
2. P. L. Lang, Y. G. Zhao, B. Yang, X. L. Zhang, J. Li, P. Wang, and D. N. Zheng, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2006980 87, 053502 (2005).
3. F. X. Hu, J. Gao, J. R. Sun, and B. G. Shen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1606098 83, 1869 (2003).
4. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88.027204 88, 027204 (2002).
5. C. M. Xiong, Y. G. Zhao, Z. H. Zhao, Z. O. Kou, Z. H. Cheng, H. F. Tian, H. X. Yang, and J. Q. Li, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2357036 89, 143510 (2006).
6. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1883336 86, 112508 (2005).
7. H. B. Lu, G. Z. Yang, Z. H. Chen, S. Y. Dai, Y. L. Zhou, K. J. Jin, B. L. Cheng, M. He, L. F. Liu, H. Z. Guo, Y. Y. Fei, W. F. Xiang, and L. Yan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1763217 84, 5007 (2004).
8. K. J. Jin, H. B. Lu, Q. L. Zhou, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.184428 71, 184428 (2005).
9. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1812580 85, 4073 (2004).
10. X. P. Zhang, B. T. Xie, Y. S. Xiao, B. Yang, P. L. Lang, and Y. G. Zhao, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2011769 87, 072506 (2005).
11. For example, F. Lemml and N. M. Johnson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.123271 74, 251 (1999); G. B. Parravicini, A. Stella, M. C. Ungureanu, and R. Kofman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1772872 85, 302 (2004); H. C. F. Martens, J. N. Huiberts, and P. W. M. Blom, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1311599 77, 1852 (2000); L. S. C. Pingree, B. J. Scott, M. T. Russell, T. J. Marks, and M. C. Hersam, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1865346 86, 073509 (2005); J. Shulman, S. Tsul, F. Chen, Y. Y. Xue, and C. W. Chu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2431782 90, 032902 (2007).
12. M. Ershov, H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski, and A. K. Jonscher, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.725254 45, 2196 (1998).
13. X. Wu, E. S. Yang, and H. L. Evans, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.346442 68, 2845 (1990).
14. H. H. P. Gommans, M. Kemerink, and R. A. J. Janssen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.72.235204 72, 235204 (2005).
15. N. A. Penin, Semiconductors SMICES 1063-7826 30, 340 (1996).
16. G. Z. Yang, H. B. Lu, F. Chen, T. Zhao, and Z. H. Chen, J. Cryst. Growth JCRGAE 0022-0248 227-228, 929 (2001).
17. H. B. Lu, S. Y. Dai, Z. H. Chen, Y. L. Zhou, B. L. Cheng, K. J. Jin, L. F. Liu, G. Z. Yang, and X. L. Ma, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1850192 86, 032502 (2005).
18. S. W. Wang, W. Lu, X. S. Chen, N. Dai, and X. C. Shen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1490628 81, 111 (2002).
19. J. P. Han, S. M. Koo, C. A. Richter, and E. M. Vogel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1771458 85, 1439 (2004).
20. A. F. Gibson, F. A. Kröger, and R. E. Burgess, Progress in Semiconductors (Heywood, London, 1960), Vol. 4, pp. 65-90.
21. A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea, London, 1983), pp. 47-251.
22. I. G. Austin and N. F. Mott, Adv. Phys. ADPHAH 0001-8732 10.1080/00018736900101267 18, 41 (1969).
23. J. R. Jameson, W. Harrison, P. B. Griffin, and J. D. Plummer, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1738177 84, 3489 (2004).