Sudden change of electrical characteristics at lasing threshold of a semiconductor laser

IEEE Journal of Quantum Electronics

Volumn 43, Issue 6, 2007, Pages 458-461

  Feng, L F ^a   Wang, C D ^a   Cong, H X ^b   Zhu, C Y ^c   Wang, Jun ^d   Xie, X S ^e   Lu, C Z ^e   Zhang, G Y ^f  

^a TIANJIN UNIVERSITY   (China)

^b NANKAI UNIVERSITY   (China)

^c FOSHAN UNIVERSITY   (China)

^d Beijing Nuclear Instrument Factory   (China)

^e BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^f PEKING UNIVERSITY   (China)

Author keywords

Capacitance; Ideality factor; Junction voltage; Multiquantum well (MQW) laser; Negative capacitance (NC); Series resistance; Sudden change

Indexed keywords

BIOELECTRIC POTENTIALS; CAPACITANCE; ELECTRIC ADMITTANCE; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; MATHEMATICAL MODELS;

IDEALITY FACTOR; JUNCTION VOLTAGE; LASING THRESHOLD; NEGATIVE CAPACITANCE;

QUANTUM WELL LASERS;

EID: 34249932410     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.895663     Document Type: Article

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