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Applied Physics A: Materials Science and Processing

Volumn 72, Issue 1, 2001, Pages 107-111

Effect of interface states on negative capacitance characteristics in GaAs homojunction far-infrared detectors

(2) Shen, W Z a,b Perera, A G U c

a SHANGHAI JIAO TONG UNIVERSITY (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

c GEORGIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041924453 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390000566 Document Type: Article

Times cited : (26)

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