On the minimum in the forward capacitance in MIS tunnel diodes

Physica Status Solidi (A) Applied Research

Volumn 160, Issue 1, 1997, Pages 127-132

  Ouennoughi, Z ^a  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; MIS DEVICES; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT;

DOPING CONCENTRATION;

TUNNEL DIODES;

EID: 0031102112     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199703)160:1<127::AID-PSSA127>3.0.CO;2-5     Document Type: Article

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