Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors

Applied Physics Letters

Volumn 89, Issue 21, 2006, Pages

  Wang, Liang ^a   Zhao, Weifeng ^a   Adesida, Ilesanmi ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; DIFFUSION; ELECTRON MOBILITY; INTERFACES (MATERIALS); IRIDIUM COMPOUNDS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); SCHOTTKY BARRIER HEIGHT; THERMALLY STABLE GATE METALS;

TRANSISTORS;

EID: 33845435274     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2393005     Document Type: Article

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