SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Electrochemical and Solid-State Letters

Volumn 13, Issue 3, 2010, Pages

AZO-gated Al0.2 Ga0.8 As/ In0.2 Ga 0.8 as high electron mobility transistors

(2) Lee, Ching Sung a Chou, Bo Yi a

a FENG CHIA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; GATE DRAIN; GATED DEVICES; HIGH TRANSMITTANCE; HIGH TRANSPARENCY; OPTICAL SENSING; VOLTAGE GAIN;

ELECTRON MOBILITY; GALLIUM; ZINC; ZINC OXIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 74849116020 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3272929 Document Type: Article

Times cited : (5)

References (13)

1
- 33847395299
- 0.8AsSb/ GaAs HEMT
- DOI 10.1109/LED.2006.889047
- K. H. Su, W. C. Hsu, C. S. Lee, T. Y. Wu, Y. H. Wu, L. Chang, R. S. Hsiao, J. F. Chen, and T. W. Chi, IEEE Electron Device Lett., 28, 96 (2007). 10.1109/LED.2006.889047 (Pubitemid 46336432)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.2 , pp. 96-99
- Su, K.-H.¹ Hsu, W.-C.² Lee, C.-S.³ Wu, T.-Y.⁴ Wu, Y.-H.⁵ Chang, L.⁶ Hsiao, R.-S.⁷ Chen, J.-F.⁸ Chi, T.-W.⁹

2
- 21044434346
- 1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels
- DOI 10.1109/TED.2005.848863
- W. C. Hsu, Y. J. Chen, C. S. Lee, T. B. Wang, J. C. Huang, D. H. Huang, K. H. Su, Y. S. Lin, and C. L. Wu, IEEE Trans. Electron Devices, 52, 1079 (2005). 10.1109/TED.2005.848863 (Pubitemid 40871142)
- (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.6 , pp. 1079-1086
- Hsu, W.-C.¹ Chen, Y.-J.² Lee, C.-S.³ Wang, T.-B.⁴ Huang, J.-C.⁵ Huang, D.-H.⁶ Su, K.-H.⁷ Lin, Y.-S.⁸ Wu, C.-L.⁹

3
- 79956003382
- A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
- DOI 10.1063/1.1485310
- C. Y. Fang, C. F. Lin, E. Y. Chang, and M. S. Feng, Appl. Phys. Lett., 80, 4558 (2002). 10.1063/1.1485310 (Pubitemid 34751405)
- (2002) Applied Physics Letters , vol.80 , Issue.24 , pp. 4558
- Fang, C.Y.¹ Lin, C.F.² Chang, E.Y.³ Feng, M.S.⁴

4
- 0003763283
- 10.1063/1.106089
- H. P. Zappe and D. J. As, Appl. Phys. Lett., 59, 2257 (1991). 10.1063/1.106089
- (1991) Appl. Phys. Lett. , vol.59 , pp. 2257
- Zappe, H.P.¹ As, D.J.²

5
- 65549102576
- 10.1063/1.3126956
- K. Okamura, D. Nikolova, N. Mechau, and H. Hahn, Appl. Phys. Lett., 94, 183503 (2009). 10.1063/1.3126956
- (2009) Appl. Phys. Lett. , vol.94 , pp. 183503
- Okamura, K.¹ Nikolova, D.² Mechau, N.³ Hahn, H.⁴

6
- 57349119889
- 10.1063/1.3031726
- B. I. Hwang, K. Park, H. S. Chun, C. H. An, H. Kim, and H. J. Lee, Appl. Phys. Lett., 93, 222104 (2008). 10.1063/1.3031726
- (2008) Appl. Phys. Lett. , vol.93 , pp. 222104
- Hwang, B.I.¹ Park, K.² Chun, H.S.³ An, C.H.⁴ Kim, H.⁵ Lee, H.J.⁶

7
- 24144501095
- Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor
- DOI 10.1016/j.sse.2005.06.014, PII S0038110105001759
- C. H. Baek, T. K. Oh, and B. K. Kang, Solid-State Electron., 49, 1335 (2005). 10.1016/j.sse.2005.06.014 (Pubitemid 41230836)
- (2005) Solid-State Electronics , vol.49 , Issue.8 , pp. 1335-1340
- Baek, C.H.¹ Oh, T.K.² Kang, B.K.³

8
- 0032314805
- 10.1109/16.735718
- A. Mahajan, M. Arafa, P. Fay, C. Caneau, and I. Aesida, IEEE Trans. Electron Devices, 45, 2422 (1998). 10.1109/16.735718
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 2422
- Mahajan, A.¹ Arafa, M.² Fay, P.³ Caneau, C.⁴ Aesida, I.⁵

9
- 37149023807
- Relieved kink effects in symmetrically graded In0.45 Al0.55 As Inx Ga1-x As metamorphic high-electron-mobility transistors
- DOI 10.1063/1.2817958
- C. S. Lee, and C. H. Liao, J. Appl. Phys., 102, 114502 (2007). 10.1063/1.2817958 (Pubitemid 350262155)
- (2007) Journal of Applied Physics , vol.102 , Issue.11 , pp. 114502
- Lee, C.-S.¹ Liao, C.-H.²

10
- 0035186727
- IEEE
- S. W. Han and H. G. Cho, in 2001 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, IEEE, p. 63 (2001).
- (2001) 2001 Annual Report Conference on Electrical Insulation and Dielectric Phenomena , pp. 63
- Han, S.W.¹ Cho, H.G.²

11
- 4944230962
- 10.1049/el:20045858
- D. Vez, S. G. Hunziker, R. Kohler, P. Royo, M. Moser, and W. Bachtold, Electron. Lett., 40, 1210 (2004). 10.1049/el:20045858
- (2004) Electron. Lett. , vol.40 , pp. 1210
- Vez, D.¹ Hunziker, S.G.² Kohler, R.³ Royo, P.⁴ Moser, M.⁵ Bachtold, W.⁶

12
- 33750827857
- Simultaneous dual band transmission over multimode fiber-fed indoor wireless network
- DOI 10.1109/LMWC.2006.884899, 1717525
- A. Nkansah, A. Das, C. Lethien, J. P. Vilcot, N. J. Gomes, I. J. Garcia, J. C. Batchelor, and D. Wake, IEEE Microw. Wirel. Compon. Lett., 16, 627 (2006). 10.1109/LMWC.2006.884899 (Pubitemid 44711822)
- (2006) IEEE Microwave and Wireless Components Letters , vol.16 , Issue.11 , pp. 627-629
- Nkansah, A.¹ Das, A.² Lethien, C.³ Vilcot, J.-P.⁴ Gomes, N.J.⁵ Garcia, I.J.⁶ Batchelor, J.C.⁷ Wake, D.⁸

13
- 33747345916
- Experimental evidence for dislocation-related gettering in metamorphic InP/InGaAs high electron mobility transistor (HEMT) structures on GaAs substrate
- DOI 10.1063/1.2222004
- Y. Liu and H. Wang, J. Appl. Phys., 100, 034505 (2006). 10.1063/1.2222004 (Pubitemid 44244756)
- (2006) Journal of Applied Physics , vol.100 , Issue.3 , pp. 034505
- Liu, Y.¹ Wang, H.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.